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Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers

by Sakshi Mehendiratta, Amandeep Kaur
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 147 - Number 2
Year of Publication: 2016
Authors: Sakshi Mehendiratta, Amandeep Kaur
10.5120/ijca2016910989

Sakshi Mehendiratta, Amandeep Kaur . Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers. International Journal of Computer Applications. 147, 2 ( Aug 2016), 13-17. DOI=10.5120/ijca2016910989

@article{ 10.5120/ijca2016910989,
author = { Sakshi Mehendiratta, Amandeep Kaur },
title = { Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers },
journal = { International Journal of Computer Applications },
issue_date = { Aug 2016 },
volume = { 147 },
number = { 2 },
month = { Aug },
year = { 2016 },
issn = { 0975-8887 },
pages = { 13-17 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume147/number2/25624-2016910989/ },
doi = { 10.5120/ijca2016910989 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T23:52:00.484236+05:30
%A Sakshi Mehendiratta
%A Amandeep Kaur
%T Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers
%J International Journal of Computer Applications
%@ 0975-8887
%V 147
%N 2
%P 13-17
%D 2016
%I Foundation of Computer Science (FCS), NY, USA
Abstract

The characteristics of blue InGaN multiple quantum well (MQW) Light Emitting Diodes (LEDs) with InGaN barriers are studied. The current-voltage (I-V) curve, Internal Quantum Efficiency (IQE), spontaneous rate are investigated. The simulation results show that the newly In0.15Ga0.85N /InGaN LED (Device 1) has reduced the forward voltage due to reduced energy barriers for electron and hole transport as compare to In0.2Ga0.8N/InGaN LED (Device 2). The Internal Quantum Efficiency (~98.5 %), Output Power (~1497.8 W/m) and spontaneous rate (~ 616.8 ×1026) achieved is more in case of In0.15Ga0.85N /InGaN 3-QW LED.

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Index Terms

Computer Science
Information Sciences

Keywords

InGaN barriers Light Emitting Diodes (LEDs) Multi-Quantum well structure.

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