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Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating

Published on None 2011 by C.Benin Pratap, Dr. S. Suresh Kumar, G. Shine Let
journal_cover_thumbnail

Novel Aspects of Digital Imaging Applications
Foundation of Computer Science USA
DIA - Number 1
None 2011
Authors: C.Benin Pratap, Dr. S. Suresh Kumar, G. Shine Let
2120a211-a7d4-46b8-8478-8211b647fa1d

C.Benin Pratap, Dr. S. Suresh Kumar, G. Shine Let . Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating. Novel Aspects of Digital Imaging Applications. DIA, 1 (None 2011), 36-39.

@article{
author = { C.Benin Pratap, Dr. S. Suresh Kumar, G. Shine Let },
title = { Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating },
journal = { Novel Aspects of Digital Imaging Applications },
issue_date = { None 2011 },
volume = { DIA },
number = { 1 },
month = { None },
year = { 2011 },
issn = 0975-8887,
pages = { 36-39 },
numpages = 4,
url = { /specialissues/dia/number1/4155-spe319t/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Special Issue Article
%1 Novel Aspects of Digital Imaging Applications
%A C.Benin Pratap
%A Dr. S. Suresh Kumar
%A G. Shine Let
%T Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating
%J Novel Aspects of Digital Imaging Applications
%@ 0975-8887
%V DIA
%N 1
%P 36-39
%D 2011
%I International Journal of Computer Applications
Abstract

This paper endeavours to estimate the influence of soft switching on semi-conductor devices’ rating, when they are subjected to high frequency applications. In order to find out the extent of saving in semiconductor devices losses, soft switched circuits were studied and analyzed. An experimental set up which could be operated both in hard-switching and soft-switching modes were chosen. Specific switching devices, namely MOSFETs were selected. The ageing of the semiconductor devices was correlated with the rise in temperature of the casing of the devices. The cutoff point for the experiment was the knee region where the thermal runaway would start. This experiment was conducted on two MOSFETs at two frequencies.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Soft switching hard switching device ageing temperature rise