CFP last date
20 May 2024
Call for Paper
June Edition
IJCA solicits high quality original research papers for the upcoming June edition of the journal. The last date of research paper submission is 20 May 2024

Submit your paper
Know more
The week's pick
Responsive image
Enhancing Privacy Preservation: Multi-Attribute Protection with P-Sensitive K-Anonymity

Twinkle Patel Kiran Amin
Random Articles
Reseach Article

High Efficiency Class F Power Amplifier Design for GSM System

by Shamil H. Hussein
journal cover thumbnail

International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 178 - Number 37
Year of Publication: 2019
Authors: Shamil H. Hussein
10.5120/ijca2019919248

Shamil H. Hussein . High Efficiency Class F Power Amplifier Design for GSM System. International Journal of Computer Applications. 178, 37 ( Aug 2019), 38-42. DOI=10.5120/ijca2019919248

@article{ 10.5120/ijca2019919248,
author = { Shamil H. Hussein },
title = { High Efficiency Class F Power Amplifier Design for GSM System },
journal = { International Journal of Computer Applications },
issue_date = { Aug 2019 },
volume = { 178 },
number = { 37 },
month = { Aug },
year = { 2019 },
issn = { 0975-8887 },
pages = { 38-42 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume178/number37/30780-2019919248/ },
doi = { 10.5120/ijca2019919248 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-07T00:52:27.946084+05:30
%A Shamil H. Hussein
%T High Efficiency Class F Power Amplifier Design for GSM System
%J International Journal of Computer Applications
%@ 0975-8887
%V 178
%N 37
%P 38-42
%D 2019
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. This paper presents the design and analysis of Class F power amplifier. The Class F amplifier is used in a base station for mobile system because of its high efficiency. An implementation of high efficiency class-F power amplifier with Gallium Arsenide (GaAs) Field Effect Transistor (FET) was realized in this paper. The analysis and design of Class F power amplifier were studied at different operating frequency. It is found that the amplifier can operate at GSM and CDMA base station at input power level more than 15dBm. The simulation of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS).

References
  1. S.C. Cripps, 2004 RF Power Amplifier For Wireless Communication. Artech House, Second Edition.
  2. International Technology Roadmap for Semiconductors (ITRS), 2009 Edition – Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications, http://www.itrs.net/, accessed September, 2011.
  3. A. Sheikh, C. Roff, J. Benedikt, P. J. Tasker, B. Noori, J. Wood, and P. H. Aaen, 2009. Peak class F and inverse class F drain efficiencies using Si LDMOS in a limited bandwidth design. IEEE Microwave Wireless Compon. Lett., vol. 19, no. 7, pp. 473–475.
  4. Abdalla Mohamed Eblabla, 2013. High Efficiency Class-F Power Amplifier Design. World Academy of Science, Engineering and Technology, International Journal of Electronics and Communication Engineering, pp: 1563-1565, Vol:7, No:12.
  5. G. G´amez, 2004. Measurement and analysis of nonlinear power amplifiers for wireless communications. Master’s thesis manuscript, Helsinki University of Technology, Espoo, Finland.
  6. V. Carrubba, J. Lees, J. Benedikt, P. J. Tasker, and S. C. Cripps, 2011. A novel highly efficient broadband continuous class-F RFPA delivering 74% average efficiency for an octave bandwidth. IEEE MTT-S International Microwave Symposium Digest (MTT).
  7. F. H. Raab, "Maximum Efficiency and Output of Class-F Power Amplifiers", IEEE Transactions on Microwave Theory and Techniques, Vol. 49, No. 6, June 2001.
  8. Junghwan Moon, 2012. Behaviors of Class-F and Class-F-1 Amplifiers. IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No. 6.
  9. Ramon A. Beltran, 2014. Class-F and Inverse Class-F Power Amplifier Loading Networks Design Based upon Transmission Zeros. Skyworks Solutions Inc., 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA.
  10. Andrei Grebennikov, Bell Labs, and Alcatel-Lucent, 2011 Load Network Design Technique for Class F and Inverse Class F Pas. High Frequency Electronics.
Index Terms

Computer Science
Information Sciences

Keywords

Power Amplifier (PAs) Class F power amplifier Gallium Arsenide (GaAs FET).

Powered by PhDFocusTM