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Reseach Article

Design and Modeling of Schmitt Trigger-based Sub-Threshold 8T SRAM for Low Power Applications

by Mahipal Dargupally, T.vasudeva Reddy, Udary Gnaneshwara Chary
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 104 - Number 12
Year of Publication: 2014
Authors: Mahipal Dargupally, T.vasudeva Reddy, Udary Gnaneshwara Chary
10.5120/18257-9416

Mahipal Dargupally, T.vasudeva Reddy, Udary Gnaneshwara Chary . Design and Modeling of Schmitt Trigger-based Sub-Threshold 8T SRAM for Low Power Applications. International Journal of Computer Applications. 104, 12 ( October 2014), 37-40. DOI=10.5120/18257-9416

@article{ 10.5120/18257-9416,
author = { Mahipal Dargupally, T.vasudeva Reddy, Udary Gnaneshwara Chary },
title = { Design and Modeling of Schmitt Trigger-based Sub-Threshold 8T SRAM for Low Power Applications },
journal = { International Journal of Computer Applications },
issue_date = { October 2014 },
volume = { 104 },
number = { 12 },
month = { October },
year = { 2014 },
issn = { 0975-8887 },
pages = { 37-40 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume104/number12/18257-9416/ },
doi = { 10.5120/18257-9416 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T22:36:00.259836+05:30
%A Mahipal Dargupally
%A T.vasudeva Reddy
%A Udary Gnaneshwara Chary
%T Design and Modeling of Schmitt Trigger-based Sub-Threshold 8T SRAM for Low Power Applications
%J International Journal of Computer Applications
%@ 0975-8887
%V 104
%N 12
%P 37-40
%D 2014
%I Foundation of Computer Science (FCS), NY, USA
Abstract

This paper presents the design of Schmitt trigger-based 8T SRAM Architecture for low power sub-threshold (or) near-threshold CMOS SRAM for power constrained Applications. Power Consumption, Power Dissipation and Leakage Power are the main factors in the IC Design. Memory unit is the primary block in design of any chip like Micro Processor and Micro Controller. As SRAMs comprise a significant percentage of the area and power for many digital chips and leakage can dominate total chip leakage. The proposed paper used to reduce the leakage power by using High-Vth nMOS as pull-down transistors for standard 6T SRAM. This paper demonstrates the Architecture Design and Analysis of 256bitcell 8T SRAM in 45nm technology. The design implementation and analysis is performed using 45nm CMOS technology in CADENCE IDE.

References
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Index Terms

Computer Science
Information Sciences

Keywords

8T SRAM Sub-Threshold Low power Low Leakage