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Improved Transient Response Capacitor-less Low Drop-out (LDO) Regulator using Current Mode Transconductance Amplifier and Slew Rate Enhancement Technique

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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 135 - Number 9
Year of Publication: 2016
Authors:
Anshu Gupta, Lalita Gupta, R.K. Baghel
10.5120/ijca2016908500

Anshu Gupta, Lalita Gupta and R K Baghel. Article: Improved Transient Response Capacitor-less Low Drop-out (LDO) Regulator using Current Mode Transconductance Amplifier and Slew Rate Enhancement Technique. International Journal of Computer Applications 135(9):22-29, February 2016. Published by Foundation of Computer Science (FCS), NY, USA. BibTeX

@article{key:article,
	author = {Anshu Gupta and Lalita Gupta and R.K. Baghel},
	title = {Article: Improved Transient Response Capacitor-less Low Drop-out (LDO) Regulator using Current Mode Transconductance Amplifier and Slew Rate Enhancement Technique},
	journal = {International Journal of Computer Applications},
	year = {2016},
	volume = {135},
	number = {9},
	pages = {22-29},
	month = {February},
	note = {Published by Foundation of Computer Science (FCS), NY, USA}
}

Abstract

This paper presents a capacitor-less low drop-out (LDO) regulator with current mode transconductance amplifier & slew-rate enhancement circuit. The proposed current mode transconductance amplifier as error amplifier improves the slew rate & slew- rate enhancement circuit further senses the transient voltage at the output of the LDO to increase the bias current of the error amplifier for a short duration. Hence, transient response of LDO has been further improved using these techniques. The proposed LDO regulator will be designed and simulated in 180nm CMOS technology.

References

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Keywords

Dynamic biasing, current mode transconductance amplifier.