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I-V and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

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International Journal of Computer Applications
© 2011 by IJCA Journal
Number 1 - Article 1
Year of Publication: 2011
Authors:
Rajesh B. Lohani
Jaya V. Gaitonde
10.5120/3810-5261

Rajesh B Lohani and Jaya V Gaitonde. Article:I-V and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods. International Journal of Computer Applications 31(4):5-11, October 2011. Full text available. BibTeX

@article{key:article,
	author = {Rajesh B. Lohani and Jaya V. Gaitonde},
	title = {Article:I-V and Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods},
	journal = {International Journal of Computer Applications},
	year = {2011},
	volume = {31},
	number = {4},
	pages = {5-11},
	month = {October},
	note = {Full text available}
}

Abstract

OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the I-V characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into the substrate. The switching time of the device has also been plotted.

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