The week's pick
Random Articles
Reseach Article
Improving the Sensitivity of MEMS Piezoresistive Pressure Sensor using Polysilicon Double Nanowire
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 34 - Number 9 |
| Year of Publication: 2011 |
| Authors: S.Maflin Shaby, A.Vimala Juliet |
10.5120/4124-5933
|
S.Maflin Shaby, A.Vimala Juliet . Improving the Sensitivity of MEMS Piezoresistive Pressure Sensor using Polysilicon Double Nanowire. International Journal of Computer Applications. 34, 9 ( November 2011), 1-4. DOI=10.5120/4124-5933
Abstract
The paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. A polysilicon double nano-wire piezoresistor was fabricated by means of RIE (reactive ion etching). The polysilicon double nanowire pressure sensor has 100x100nm2 cross section area and has a thickness about 10nm. Finite element method (FEM) is adopted to optimize the sensor output and to improve the sensitivity of the polysilicon nano wire Piezoresistive pressure sensor The double polysilicon nanowire is fabricated in such a way that it forms a bridge between the polysilicon diaphragm and the substrate. The proposed double nano wire polysilicon pressure sensor is compared with single nano wire polysilicon pressure sensor and bulk silicon pressure sensor. The fabricated polysilicon nanowire has high sensitivity of about 160 mV/V.KPa.
References
- Y. H. Zhang, C. Yang, Z. H. Zhang, H. W. Lin, L. T.Liu, T. L. Ren, “A Novel Pressure Microsensor With 30-µm-Thick Diaphragm and Meander-Shaped Piezoresistors Partially Distributed on High-Stress bulk Silicon Region”, J. Micromech. Susc., vol. 14,pp.1272-1282,2005.
- H. Jensenius, J. Thaysen, A. A. Rasmussen, L. H.Veje, O. Hansen, A. Boisen, “A microcantilever-based alcohol vapor sensor-application and response model”,Applied Physics Letters, vol. 76, pp. 2615-2617, 2000.
- A.A. Barlian, W.T. Park, J.R. Mallon, A.J.Rastegar, B.L. Pruitt, “Review: Semiconductor Piezoresistance for Microsystems”, Proc. of theIEEE, vol., 97, pp. 513, 2009.
- P. A. Rasmussen, O. Hansen, and A. Boisen,“Cantilever surface stress sensors with single-crystalline silicon piezoresistors”, Appl. Phys Lett., vol. 86, pp. 203502, 2005.
- C. S. Smith, “Piezoresistance Effect in Germanium and Silicon”, Physical Review, vol. 94, pp. 42-49, 1954.
- T. Toriyama, Y. Tanimoto, S. Sugiyama, “Single crystal silicon nano-wire piezoresistors for mechanical sensors”, Journal of microelectromechanical systems,vol. 11, pp. 605-611, 2002.
- O.N. Tufte and E.L. Steltzer, “Piezoresistive properties of silicon diffused layers”, Journal of Applied Physics,vol. 34, pp. 313–318, 1963.
- P. J. French, A. G. R. Evans, “Piezoresistance in Polysilicon and its Applications to Strain Gauges”, Solid State Electronics, vol. 32, pp. 1-9, 1982.
- Min-Xin Zhou, Qing-An Huang, Senior Member, IEEE,Ming Qin, and Wei Zhou “A Novel Capacitive Pressure Sensor Based on Sandwich Structures” Journal of microelectromechanical systems, vol. 14, pp. 1272-1282, 2005.
- M. X. Zhou, Q. A. Huang, M. Qin, W. Zhou, “A novel capacitive pressure sensor based on sandwich structures”, Journal of microelectromechanical systems, vol. 14, pp. 1272-1282, 2005.
- S. Vlassis, T. Laopoulos, and S. Siskos, “Pressure sensors interfacing circuit with digital output,” Proc. Inst. Elect. Eng. Circuits Devices Syst., vol. 145, pp. 332–336, Oct. 1998.
- J. Jordana and R. Pall‘as-Areny, “A simple, efficient interface circuit for piezoresistive pressure sensors,” Sens. Actuators A, vol. 127, pp.69–73, 2006.
- K. Reck, J. Richter, O. Hansen and E.V. Thomsen Technical University of Denmark, Kgs. Lyngby, Denmark“Piezoresistive effect in top-down fabricated Silicon nanowires ” Proc. MEMS 2008.
- L. Lin, H. -. Chu, and Y. Lu, “A simulation program for the sensitivity and linearity of piezoresistive pressure sensors,” IEEE J. Microelectromech.Syst., vol. 8, pp. 514–522, Dec. 1999.
- R. He, P. Yang, “Giant Piezoresistance Effect in Silicon Nanowires”, Nature nanotechnology, vol. 1,pp. 42-46, 2006.
- S. C. Gong, “Effects of pressure sensor dimensions on process window of membrane thickness,” Sens. Actuators A, vol. 112, pp. 286–290,2004.
- S.Maflin Shaby and A.Vimala Juliet “Single Polysilicon Nano-Wire Piezoresistors for MEMS Pressure Sensor”Journal of ciit vol 3,No 7,pp 497-501,May 2011.
- J. H. Kim, K. T. Park, H. C. Kim, and K. Chun “Fabrication Of A Piezoresistive Pressure Sensor For Enhancing Sensitivity Using Silicon Nanowire” Transducers 2009, Denver, CO, USA, June 21-25, 2009.
- A. Lugstein, M. Steinmair, A. Steiger, H. Kosina, E.Bertagnolli, “Anamalous Piezoresistive Effect in Ultrastrained Silicon Nanowires”, Nanoletters, vol.10, pp. 3204, 2010.
- A. C. H. Rowe, “Silicon nanowires feel the pinch”,Nat. Nanotechnol. vol. 3, pp. 311, 2008.
- Z. Dibi, A. Boukabache, and P. Pons, “Effect of the silicon membrane flatness defect on the piezoresistive pressure sensor response,” in Proc.IEEE Conf. Electron., Circuits, Syst. (ICECS’00), Jounieh, Lebanon,Dec. 17–20, 2000, pp. 853–856.
Index Terms
Keywords