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A Novel Approach to use ZnO Thin Film as a Switching in Dynamic Random Access Memory (DRAM) Cell

by Amit Kumar, Deepak Chaudhary, Manoj Kumar, Beer Pal Singh
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 44 - Number 2
Year of Publication: 2012
Authors: Amit Kumar, Deepak Chaudhary, Manoj Kumar, Beer Pal Singh
10.5120/6232-7454

Amit Kumar, Deepak Chaudhary, Manoj Kumar, Beer Pal Singh . A Novel Approach to use ZnO Thin Film as a Switching in Dynamic Random Access Memory (DRAM) Cell. International Journal of Computer Applications. 44, 2 ( April 2012), 1-4. DOI=10.5120/6232-7454

@article{ 10.5120/6232-7454,
author = { Amit Kumar, Deepak Chaudhary, Manoj Kumar, Beer Pal Singh },
title = { A Novel Approach to use ZnO Thin Film as a Switching in Dynamic Random Access Memory (DRAM) Cell },
journal = { International Journal of Computer Applications },
issue_date = { April 2012 },
volume = { 44 },
number = { 2 },
month = { April },
year = { 2012 },
issn = { 0975-8887 },
pages = { 1-4 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume44/number2/6232-7454/ },
doi = { 10.5120/6232-7454 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T20:34:28.688352+05:30
%A Amit Kumar
%A Deepak Chaudhary
%A Manoj Kumar
%A Beer Pal Singh
%T A Novel Approach to use ZnO Thin Film as a Switching in Dynamic Random Access Memory (DRAM) Cell
%J International Journal of Computer Applications
%@ 0975-8887
%V 44
%N 2
%P 1-4
%D 2012
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Resistance switching random access memory (RRAM) has drawn considerable attention for the application in non- volatile memory element in semiconductor memory devices. A ZnO thin film now assumed to be useful for dynamic random access memory (DRAM) cell. In this paper we provide a framework to its use as a switching ON or OFF in DRAM cell. In this type of memory cell the ZnO thin film has a lot of importance instead of a transistor. Inside the DRAM cell, we are suggested to use the ZnO thin film due to its reliable and repeated switching of the resistance. Thus after the replacement of ZnO thin film as a switching element instead of a transistor, the DRAM cell has a strong resistance switching capability.

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Index Terms

Computer Science
Information Sciences

Keywords

Zno Thin Film Resistance Switching Dram

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