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Reseach Article

Power Gain Analysis of Optically Illuminated MOSFET

by Prerana Jain, B. K. Mishra, Phade G.
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 51 - Number 16
Year of Publication: 2012
Authors: Prerana Jain, B. K. Mishra, Phade G.
10.5120/8130-1880

Prerana Jain, B. K. Mishra, Phade G. . Power Gain Analysis of Optically Illuminated MOSFET. International Journal of Computer Applications. 51, 16 ( August 2012), 40-54. DOI=10.5120/8130-1880

@article{ 10.5120/8130-1880,
author = { Prerana Jain, B. K. Mishra, Phade G. },
title = { Power Gain Analysis of Optically Illuminated MOSFET },
journal = { International Journal of Computer Applications },
issue_date = { August 2012 },
volume = { 51 },
number = { 16 },
month = { August },
year = { 2012 },
issn = { 0975-8887 },
pages = { 40-54 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume51/number16/8130-1880/ },
doi = { 10.5120/8130-1880 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T20:50:36.260967+05:30
%A Prerana Jain
%A B. K. Mishra
%A Phade G.
%T Power Gain Analysis of Optically Illuminated MOSFET
%J International Journal of Computer Applications
%@ 0975-8887
%V 51
%N 16
%P 40-54
%D 2012
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Modelling of optically illuminated MOSFET is done considering the substrate effect to evaluate admittance and scattering parameters for microwave frequency applications. Analysis of various gains and figure of merit is also incorporated indicating that optically controlled MOSFET can be used in optical communication circuits with enhanced electrical characteristics.

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Index Terms

Computer Science
Information Sciences

Keywords

Modeling MOSFET Photodetector optoelectronics Powergain RF