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Design of a Wide Band RF Amplifier using Scattering Parameters

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International Journal of Computer Applications
© 2013 by IJCA Journal
Volume 66 - Number 11
Year of Publication: 2013
Authors:
Sami Mahersi
Mohamed Dhieb
Hamadi Ghariani
Mounir Samet
10.5120/11125-6196

Sami Mahersi, Mohamed Dhieb, Hamadi Ghariani and Mounir Samet. Article: Design of a Wide Band RF Amplifier using Scattering Parameters. International Journal of Computer Applications 66(11):1-4, March 2013. Full text available. BibTeX

@article{key:article,
	author = {Sami Mahersi and Mohamed Dhieb and Hamadi Ghariani and Mounir Samet},
	title = {Article: Design of a Wide Band RF Amplifier using Scattering Parameters},
	journal = {International Journal of Computer Applications},
	year = {2013},
	volume = {66},
	number = {11},
	pages = {1-4},
	month = {March},
	note = {Full text available}
}

Abstract

This paper presents a new concept of a wide band RF amplifier using scattering parameters that is often used in the radio frequency communication system. This amplifier operates from 80MHz to 1. 1GHz frequency and it is based on BFG65 NPN transistor that has a high transition frequency of 7. 5GHz [1]. The simulation results show good performances. The power gain S21 is varied between 10 and 14. 34 dB. For the input reflection coefficient S11 is changed between -29. 3 and -17. 61 dB. Regarding the output reflection coefficient S22 is varied between -19. 78 and -10. 36 dB. For the reverse transmission S12 is changed between -23. 23 and -24. 65 dB. Regarding the noise figure NF is varied between 3. 6 and 3. 9 dB. For the 1 dB compression point is changed between -13. 94 and -8. 24 dBm.

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