CFP last date
20 June 2024
Reseach Article

Design of a Wide Band RF Amplifier using Scattering Parameters

by Sami Mahersi, Mohamed Dhieb, Hamadi Ghariani, Mounir Samet
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 66 - Number 11
Year of Publication: 2013
Authors: Sami Mahersi, Mohamed Dhieb, Hamadi Ghariani, Mounir Samet
10.5120/11125-6196

Sami Mahersi, Mohamed Dhieb, Hamadi Ghariani, Mounir Samet . Design of a Wide Band RF Amplifier using Scattering Parameters. International Journal of Computer Applications. 66, 11 ( March 2013), 1-4. DOI=10.5120/11125-6196

@article{ 10.5120/11125-6196,
author = { Sami Mahersi, Mohamed Dhieb, Hamadi Ghariani, Mounir Samet },
title = { Design of a Wide Band RF Amplifier using Scattering Parameters },
journal = { International Journal of Computer Applications },
issue_date = { March 2013 },
volume = { 66 },
number = { 11 },
month = { March },
year = { 2013 },
issn = { 0975-8887 },
pages = { 1-4 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume66/number11/11125-6196/ },
doi = { 10.5120/11125-6196 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T21:22:04.395477+05:30
%A Sami Mahersi
%A Mohamed Dhieb
%A Hamadi Ghariani
%A Mounir Samet
%T Design of a Wide Band RF Amplifier using Scattering Parameters
%J International Journal of Computer Applications
%@ 0975-8887
%V 66
%N 11
%P 1-4
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

This paper presents a new concept of a wide band RF amplifier using scattering parameters that is often used in the radio frequency communication system. This amplifier operates from 80MHz to 1. 1GHz frequency and it is based on BFG65 NPN transistor that has a high transition frequency of 7. 5GHz [1]. The simulation results show good performances. The power gain S21 is varied between 10 and 14. 34 dB. For the input reflection coefficient S11 is changed between -29. 3 and -17. 61 dB. Regarding the output reflection coefficient S22 is varied between -19. 78 and -10. 36 dB. For the reverse transmission S12 is changed between -23. 23 and -24. 65 dB. Regarding the noise figure NF is varied between 3. 6 and 3. 9 dB. For the 1 dB compression point is changed between -13. 94 and -8. 24 dBm.

References
  1. Agilent Technologies, "Vendor Component Libraries RF Transistor Library," September 2004.
  2. Max W. Medley, Jr, "Microwave and RF Circuits: Analysis, Synthesis and Design," Artech House, 1993.
  3. M. Bacha and L. Hadjabderrahmane, "Design of Broadband Microwave Amplifier for Telecommunication Applications," The 14th IASTED International conference on Applied Simulation and Modelling. Benalmadèna, Spain, 15-17 June, 2005.
  4. K. B. Niclas, W. T. Wilser, T. R. Kritzer and R. R. Pereira, "On Theory and Performance of Solid-State Microwave Distributed Amplifiers," IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-31, NO. 6, June 1983.
  5. Tri T. Ha, "Solid State Microwave AmplifierDesign," A Wiley Interscience Publication 1981.
  6. G. Matthaei, L. Young, E. M. T. Jones, "Microwave Filters, Impedance matching networks, and coupling Structures," Artech House 1980.
  7. A. B. Ibrahim, A. R. Othman, M. N. Husain, M. S. Johal, "High Gain, Low Noise Cascode LNA with RF Amplifier at 5. 8GHz Using T-Matching Networks," 2nd International Conference on Advancements in Electronics and Power Engineering (ICAEPE'2012) June 30-July 2012.
  8. M. Pozar, David, Microwave and RF Wireless System, Third Avenue, N. Y. John Wiley & Sons, in 2001.
  9. Gonzalez Guillermo, Microwave Transistor Amplifier, 1996.
  10. G. D. Vendelin, "Design of Amplifiers and oscillators by the S parameter Method," New York, Wiley-Interscience, 1982. 200 p.
Index Terms

Computer Science
Information Sciences

Keywords

Wide band RF amplifier Input matching Output matching RF communication system