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Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques

by Balwant Raj, Sukhleen Bindra
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 75 - Number 18
Year of Publication: 2013
Authors: Balwant Raj, Sukhleen Bindra
10.5120/13346-9922

Balwant Raj, Sukhleen Bindra . Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques. International Journal of Computer Applications. 75, 18 ( August 2013), 4-13. DOI=10.5120/13346-9922

@article{ 10.5120/13346-9922,
author = { Balwant Raj, Sukhleen Bindra },
title = { Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques },
journal = { International Journal of Computer Applications },
issue_date = { August 2013 },
volume = { 75 },
number = { 18 },
month = { August },
year = { 2013 },
issn = { 0975-8887 },
pages = { 4-13 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume75/number18/13346-9922/ },
doi = { 10.5120/13346-9922 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T21:44:34.563465+05:30
%A Balwant Raj
%A Sukhleen Bindra
%T Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques
%J International Journal of Computer Applications
%@ 0975-8887
%V 75
%N 18
%P 4-13
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap energy, electron mobility, thermal conductivity and thermal resistance has been carried out. The electrical measurements have been done using network analyzer with infrared IR measurement technology. The results obtained on the basis of electrical measurements are compared with analytical and simulated results for the purpose of validation of our outcomes. The measured data shows a good agreement with analytical and simulated results, thereby validating our approach of AlGaN/GaN HEMT analysis.

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Index Terms

Computer Science
Information Sciences

Keywords

Thermal Simulations AlGaN/GaN HEMT Modeling Measurements

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