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Reseach Article

Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology

by Anuj Kumar Shrivastava, Shyam Akashe
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 75 - Number 3
Year of Publication: 2013
Authors: Anuj Kumar Shrivastava, Shyam Akashe
10.5120/13095-0378

Anuj Kumar Shrivastava, Shyam Akashe . Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology. International Journal of Computer Applications. 75, 3 ( August 2013), 48-52. DOI=10.5120/13095-0378

@article{ 10.5120/13095-0378,
author = { Anuj Kumar Shrivastava, Shyam Akashe },
title = { Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology },
journal = { International Journal of Computer Applications },
issue_date = { August 2013 },
volume = { 75 },
number = { 3 },
month = { August },
year = { 2013 },
issn = { 0975-8887 },
pages = { 48-52 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume75/number3/13095-0378/ },
doi = { 10.5120/13095-0378 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T21:43:20.096163+05:30
%A Anuj Kumar Shrivastava
%A Shyam Akashe
%T Comparative Analysis of Low Power 10T and 14T Full Adder using Double Gate MOSFET at 45nm Technology
%J International Journal of Computer Applications
%@ 0975-8887
%V 75
%N 3
%P 48-52
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Full adder is the basic block of arithmetic circuit found in microcontroller and microprocessor inside arithmetic and logic unit (ALU). Improving the performance of the adder is essential for upgrade the performance of digital electronics circuit where adder is employed. This paper described a comparative analysis of double gate 10T and double gate 14T adder at 45nm technology. In this paper we calculate the leakage current, average power and Delay of the designed circuit of 10T and 14T Full adder. 10T double gate full adder achieves 31. 25% reduction in active power and 95% reduction in leakage current as compared to 14T double gate full adder. Simulation results of double gate full adder have been performed on cadence virtuoso tool with 45nm technology.

References
  1. Sun, X. -G. , Mao, Z. -G. , and Lai, F. -C. "A 64 bit parallel CMOS adder for high performance processors", Proc. IEEE Asia-Pacific Conf. on ASIC, 2002, pp. 205–208.
  2. Vahid Moalemi and Ali Afzali-Kusha, "Subthreshold 1-bit Full adder cells in sub-100nm technologies", IEEE Computer Society Annual Symposium on VLSI (ISVLSI-07), Porto Alegre, Brazil, March 9-11, 2007 (ISBN 0-7695-2896-1).
  3. Lu Junming; Shu Yan; Lin Zhenghui; Wang Ling," A Novel IO-transistor Low-power High-speed Full adder cell", Proceedings of 6th International Conference on Solid-State and Integrated-Circuit Technology, vol-2, pp. 1155-1158,2001.
  4. Dan Wang, Maofeng Yang, Wu Cheng, Xuguang Guan, Zhangming Zhu, Yintang Yang, "Novel Low Power Full Adder Cells in 180nm CMOS Technology", 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009, pp 430-433.
  5. Adarsh Kumar Agrawal, Shivshankar Mishra, and R K. Nagaria, "Proposing a Novel Low-Power High-Speed Mixed GDI Full Adder Topology", accepted in Proceeding of IEEE International Conference on Power, Control and Embedded System (ICPCES), 28 Nov. -1 Dec. 2010.
  6. Shipra Mishra, Shelendra Singh Tomar and Shyam Akashe, "Design low power 10T full adder using process and circuit techniques", 7th IEEE International Conference on Intelligent Systems and Control(ISCO) Coimbatore 2013, pp. 325-328.
  7. Mohammad Hossein Moaiyeri and Reza Faghih Mirzaee, Keivan Navi, 'Two New Low-Power and High-Performance Full Adders", Journal Of Computers, Vol. 4,N o. 2,February 2009.
  8. Mariano Aguirre-Hernandez and Monico Linares-Aranda, "CMOS Full Adders for Energy-Efficient Arithmetic Applications", IEEE Transactions On Very Large Scale Integration (Vlsi) Systems, Vol. 19, No. 4, April 2011.
  9. G. Shyam Kishore, Associate. Prof, ECE dept, JITS, Karimnagar, Andhra Pradesh, India, "A Novel Full Adder with High Speed Low Area", Proceedings published in International Journal of Computer Applications® (UCA) , 2nd National Conference on Information and Communication Technology (NCICT) 2011.
  10. R. Johri, R. Singh, S. P. Pandey and S. Akashe, "Comparative analysis of 10T and 14T full adder at 45nm technology", 2nd IEEE International Conference on Parallel Distributed and Grid Computing (PDGC) Solan 2012, pp. 833-837.
  11. Neil H. E. Weste, David Harris and Ayan Banerjee, "CMOS VLSI Design: A Circuit and System Perspective", Pearson Education, Third Edition 2011.
  12. Vahid Moalemi and Ali Afzali-Kusha, "Subthreshold 1-bit Full adder cells in sub-100nm technologies", IEEE Computer Society Annual Symposium on VLSI (ISVLSI-07), Porto Alegre, Brazil, March 9-11, 2007 (ISBN 0-7695-2896-1).
  13. K. Roy, S. Mukhopadhyay and H. Mahmoodi-Meimand, "Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicron CMOS Circuits", Proceedings of the IEEE 2003, Vol. 91, No. 2, pp. 305-327.
  14. Vahid Moalemi and Ali Afzali-Kusha, "Subthreshold 1-bit Full adder cells in sub-100nm technologies", IEEE Computer Society Annual Symposium on VLSI (ISVLSI-07), Porto Alegre, Brazil, March 9-11, 2007 (ISBN 0-7695-2896-1).
Index Terms

Computer Science
Information Sciences

Keywords

Full adder Low power arithmetic operation Double gate mosfet leakage current