CFP last date
22 July 2024
Reseach Article

Roadmap to the Modeling Approach and Design of RFCMOS Devices

Published on January 2013 by Karthigha Balamurugan, M. Nirmala Devi, M. Jayakumar
Amrita International Conference of Women in Computing - 2013
Foundation of Computer Science USA
AICWIC - Number 2
January 2013
Authors: Karthigha Balamurugan, M. Nirmala Devi, M. Jayakumar
fab269f4-6ecf-4f66-b2c7-e9518ffbae15

Karthigha Balamurugan, M. Nirmala Devi, M. Jayakumar . Roadmap to the Modeling Approach and Design of RFCMOS Devices. Amrita International Conference of Women in Computing - 2013. AICWIC, 2 (January 2013), 6-10.

@article{
author = { Karthigha Balamurugan, M. Nirmala Devi, M. Jayakumar },
title = { Roadmap to the Modeling Approach and Design of RFCMOS Devices },
journal = { Amrita International Conference of Women in Computing - 2013 },
issue_date = { January 2013 },
volume = { AICWIC },
number = { 2 },
month = { January },
year = { 2013 },
issn = 0975-8887,
pages = { 6-10 },
numpages = 5,
url = { /proceedings/aicwic/number2/9867-1309/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 Amrita International Conference of Women in Computing - 2013
%A Karthigha Balamurugan
%A M. Nirmala Devi
%A M. Jayakumar
%T Roadmap to the Modeling Approach and Design of RFCMOS Devices
%J Amrita International Conference of Women in Computing - 2013
%@ 0975-8887
%V AICWIC
%N 2
%P 6-10
%D 2013
%I International Journal of Computer Applications
Abstract

Requirements of RF CMOS device and its related design issues to operate at high frequencies are discussed. Problems faced by current CMOS models and its lack of accuracy in capturing high frequency are focused. To improve model accuracy, Vendor modeling approach is discussed to model frequency dependent parameters like substrate resistance, gate resistance and noise signals. In this connection, few design techniques of RF CMOS device to improve frequency dependent parameters are discussed. Limits possessed on CMOS scaling and an insight into the next generation CMOS devices have been overviewed.

References
  1. Lee, T. , H. , Wong, S. , S. 2000. CMOS RF Integrated Circuits at 5GHz and beyond. In Proceedings of the IEEE, Vol. 88, NO. 10, pp. 1560-1571.
  2. Golio, J. M. 2001. The RF and microwave handbook. CRC PressI Llc.
  3. Heydari, B. , Bohsali, M. , Adabi, E. , Niknejad, A. M. 2007. Millimeter-wave devices and circuit blocks up to 104 GHz in 90 nm CMOS. Solid-State Circuits, IEEE Journal of, 42(12), 2893-2903.
  4. Saijets, J. 2007. MOSFET RF characterization using bulk and SOI CMOS technologies. VTT Technical Research Centre of Finland.
  5. Gogineni, U. , Li, H. , del Alamo, J. A. , Sweeney, S. L. , Wang, J. , & Jagannathan, B. 2010. Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices. Solid-State Circuits, IEEE Journal of, 45(5), 998-1006.
  6. van Genderen, A. , van der Meijs, N. , & Schrik, E. 2001. Modeling capacitive coupling effects via the substrate. In ProRISC IEEE 12th Annual Workshop on Circuits, Systems and Signal Processing (pp. 366-370).
  7. Chang, R. T. , Yang, M. T. , Ho, P. P. , Wang, Y. J. , Chia, Y. T. , Liew, B. K. , Wong, S. S. 2004. Modeling and optimization of substrate resistance for RF-CMOS. Electron Devices, IEEE Transactions on, 51(3), 421-426.
  8. Kang, I. M. , Jung, S. J. , Choi, T. H. , Lee, H. W. , Jo, G. , Kim, Y. K. , Choi, K. M. 2009. Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions. Electron Device Letters, IEEE, 30(4), 404-406.
  9. Jin, X. , Ou, J. J. , Chen, C. H. , Liu, W. , Deen, M. J. , Gray, P. R. , Hu, C. 1998. An effective gate resistance model for CMOS RF and noise modeling. In Electron Devices Meeting, 1998. IEDM'98. Technical Digest. , International (pp. 961-964). IEEE.
  10. Cheng, Y. , & Matloubian, M. 2001. High frequency characterization of gate resistance in RF MOSFETs. Electron Device Letters, IEEE, 22(2), 98-100.
  11. Liang, C. , Razavi, B. 2009. Systematic transistor and inductor modeling for millimeter-wave design. Solid-State Circuits, IEEE Journal of, 44(2), 450-457.
  12. Razavi, B. 2002. Design of Analog CMOS Integrated Circuits. Tata Mc Graw-Hill.
  13. Sari. S. , Balamurugan, K. , Jayakumar. M. 2012. Extraction and Modeling of Metallization Capacitance of MOSFET for Millimeter-wave CMOS Circuits. In Proceedings of ICECT 2012, vol. 3, pp. 538-541.
  14. Sari S. , Balamurugan, K. , Jayakumar M. 2012. Dependence of Substrate Resistance of RF MOSFET on the Performance of LNA at 60 GHz" IJCSI, vol. 9, no. 4.
  15. George, S. , Balamurugan, K. , Jayakumar, M. 2012. Analysis of drain current model for multiple gate MOSFETs. In Proceedings of ICETT, vol. 2.
  16. Song, J. , Yu, B. , Yuan, Y. , & Taur, Y. 2009. A review on compact modeling of multiple-gate MOSFETs. Circuits and Systems I: Regular Papers, IEEE Transactions on, 56(8), 1858-1869.
  17. Taur, Y. , Liang, X. , Wang, W. , & Lu, H. 2004. A continuous, analytic drain-current model for DG MOSFETs. Electron Device Letters, IEEE, 25(2), 107-109.
  18. www. newsroom. intel. com
Index Terms

Computer Science
Information Sciences

Keywords

Rf Cmos Modeling Substrate And Gate Resistance Modeling Design Techniques Of Rf Cmos Scaling Multiple Gate Mosfet