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Synthesis of Nanostructured As2S3 Thin Films by Chemical Route: Effect of Complexing Agent

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IJCA Proceedings on International Conference on Benchmarks in Engineering Science and Technology 2012
© 2012 by IJCA Journal
ICBEST - Number 3
Year of Publication: 2012
Authors:
Ashok U. Ubale
Monali V. Bhute
Yogesh S. Sakhare
Milind R. Belkhedkar
S. G. Ibrahim

Ashok U Ubale, Monali V Bhute, Yogesh S Sakhare, Milind R Belkhedkar and S G Ibrahim. Article: Synthesis of Nanostructured As2S3 Thin Films by Chemical Route: Effect of Complexing Agent. IJCA Proceedings on International Conference on Benchmarks in Engineering Science and Technology 2012 ICBEST(3):15-18, October 2012. Full text available. BibTeX

@article{key:article,
	author = {Ashok U. Ubale and Monali V. Bhute and Yogesh S. Sakhare and Milind R. Belkhedkar and S. G. Ibrahim},
	title = {Article: Synthesis of Nanostructured As2S3 Thin Films by Chemical Route: Effect of Complexing Agent},
	journal = {IJCA Proceedings on International Conference on Benchmarks in Engineering Science and Technology 2012},
	year = {2012},
	volume = {ICBEST},
	number = {3},
	pages = {15-18},
	month = {October},
	note = {Full text available}
}

Abstract

The effect of complexing agent on structural, electrical and optical properties of nanostructured As2S3 thin films deposited by chemical bath deposition method is reported. The synthesized films were characterized by X-ray diffraction, electrical resistivity and optical absorption measurements. The deposited films are nanocrystalline in nature with monoclinic lattice. The electrical resistivity and activation energy is found complex dependent.

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