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Future Prospects of Diamond in High Power MMW Application

IJCA Proceedings on International Conference on Emerging Trends in Informatics and Communication
© 2016 by IJCA Journal
ICETIC 2016 - Number 1
Year of Publication: 2016
Debraj Chakraborty
Moumita Mukherjee

Debraj Chakraborty and Moumita Mukherjee. Article: Future Prospects of Diamond in High Power MMW Application. IJCA Proceedings on International Conference on Emerging Trends in Informatics and Communication ICETIC 2016(1):19-22, September 2016. Full text available. BibTeX

	author = {Debraj Chakraborty and Moumita Mukherjee},
	title = {Article: Future Prospects of Diamond in High Power MMW Application},
	journal = {IJCA Proceedings on International Conference on Emerging Trends in Informatics and Communication},
	year = {2016},
	volume = {ICETIC 2016},
	number = {1},
	pages = {19-22},
	month = {September},
	note = {Full text available}


Use of Diamond for electronic applications was started for development of photoconductive detectors. However limitations in size and control of properties naturally limited the use of Diamond to a few specialty applications. With the development of Diamond synthesis from vapour phase has come a more serious interest in developing diamond based electronic devices. Diamond (band gap energy = 5. 6 eV at 300K) supports peak internal electric field about 6 times higher than those of Si and GaAs, resulting in higher breakdown voltage, which is extremely important for devices handling high power. Another consequence of higher electric field and higher doping density is the width reduction in the drift region. Thus, not only high power but also the high frequency (MM/sub-MMW) operation capability is expected from this wide band gap semiconductor based devices. Hence Diamond based devices are expected to operate at higher voltage at the same operating frequency. Diamond is less noisy and is chemically very stable at high temperature. The expected excellent performances of diamond devices can be assessed by considering Keyes' FOM (considering the speed of transistors and their thermal limitations) and Johnson's FOM (considering the HF and high power capability of devices). Assuming Keyes' and Johnson's FOM for Si as unity, the Keyes' FOM and Johnson's FOM for GaAs are 0. 45 and 7. 1 respectively; those for Type II-diamond are 2. 5 and 800 respectively. This clearly indicates that the HF and high temperature performance of Diamond devices would be much superior as compared to conventional Si and GaAs. The extensive simulation results reveal that MITATT diode based on Diamond gives better performance in terms of efficiency and output power. The design results and the proposed experimental methodologies presented in this paper will be helpful to realize Diamond MITATT oscillators for Terahertz communication.


  • Eric R. Mueller, " Terahertz Radiation: Applications and Sources," The Industrial Physicist. pp. 27-29, August/ September 2003.
  • Christian Jansen, et. al. , " Applications for THz Systems: Approaching Markets and Perspectives for an Innovative Technology, " Optik & Photonik, 2008 Wiley-VCH Verlag GmbH & CO. KGaA,Weinheim,26-30, Dec. ,2008
  • M. Tonouchi, " Cutting-edge terahertz technology," Nature Photonics, http://www. nature. com/naturephotonics, Vol-I, Feb. ,2007
  • B. Chakrabarti, D. Ghosh, M. Mitra , "Effects of Photo Illumination on Diamond Based DDR IMPATT Diode Operating at MM-wave Frequency Band", IJSCE, Vol 3, Issue 2, May 2013
  • M. Shur, " Terahertz technology: Devices and Applications," Proc. ESSDERC, Grenoble, France, 2005
  • M. Mukherjee, N. Majumder, S. K. Roy, " Prospects of Photosensitive InP based Top mounted and Flip chip Impatt Oscillators for application in THZ regime," Int. J. of Electronics (Taylor and Francis Publication, UK)
  • M. Mukherjee, J. Mukhopadhyay, J. P. Banerjee and S. K. Roy, " Millimeter wave properties of photo-illuminated double- drift InP Impatts at Elevated temperature," Proc. Of IEEE International Conference on Microwave and Millimeterwave Technology (IEEE ICMMT-2008), Vol-2, pp. 897-900, April 2008, China.
  • M. Mukherjee and N. Majumder, " Photo-illuminated InP Terahertz Impatt device ," Proc. Of XIXth IEEE Int. Conference on InP and Related Materials (IEEE IPRM -2007),pp 137-140, May 2007, Matsue, Japan.
  • M. Mukherjee , N. Majumder , K. Goswami and S. K. Roy, " An Opto- sensitive InP based Impatt diode for application in Terahertz regime," Proc. of XIVth IEEE Int. Workshop on Physics of Semiconductor Devices (IEEE IWPSD 2007), pp. 392-395, Dec. -2007, IIT Bombay & TIFR, Mumbai, India.
  • Soumen Banerjee, M. Mukherjee and J. P. Banerjee, " Bias current Optimization of Wz-GaN DDR Impatt diode for high power operation at THz frequencies," Int. Journal of Advanced Science &Technology,vol. -16, pp. 11-20, March 2010.
  • Soumen Banerjee, M. Mukherjee and J. P. Banerjee, " Studies on the performance of Wz-GaN DDR Impatt diode at Optimum bias current for THz frequencies", Proc. of Third Conference on Micro/Nano Devices, Structures & Systems (IEEE MiNDSS-2010), pp. 157-162, Tamil Nadu, India, 2010.
  • Madhu – Sudan Gupta and Ronald J. Lomax, " A Current –Excited Large Signal Analysis of IMPATT Devices and Its Circuit Implications," IEEE Transactions on Electron Devices , Vol. ED-20, No. 4, April 1973