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III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication

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IJCA Proceedings on International Conference on Emerging Trends in Informatics and Communication
© 2016 by IJCA Journal
ICETIC 2016 - Number 1
Year of Publication: 2016
Authors:
Abhijit Kundu
Maitreyi Ray Kanjilal
Arun Bera
Jhuma Kundu

Abhijit Kundu, Maitreyi Ray Kanjilal, Arun Bera and Jhuma Kundu. Article: III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication. IJCA Proceedings on International Conference on Emerging Trends in Informatics and Communication ICETIC 2016(1):28-32, September 2016. Full text available. BibTeX

@article{key:article,
	author = {Abhijit Kundu and Maitreyi Ray Kanjilal and Arun Bera and Jhuma Kundu},
	title = {Article: III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication},
	journal = {IJCA Proceedings on International Conference on Emerging Trends in Informatics and Communication},
	year = {2016},
	volume = {ICETIC 2016},
	number = {1},
	pages = {28-32},
	month = {September},
	note = {Full text available}
}

Abstract

This paper presents a new monolithic gallium nitride based p-i-n diode model which enhances the power handling capacity and bandwidth in millimeter wave (MMW) communication. The proposed model is simulated at bias current of 2 milliampere in 1. 24 ohm series resistance to obtain insertion loss, isolation and return loss. Transit time analysis is also required to improve the performance of the switch and all these simulated results are compared to the standard measured value. A series connected Single Pole Single Throw (SPST) switch is implemented using p-i-n diode to get low insertion loss, low return loss and better isolation at high frequency. This radio frequency switch is more useful to deliver the radio frequency signal from one transmitter to N- number of receiver at 90 gigahertz frequency through 18 gigahertz frequency.

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