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Reseach Article

III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication

Published on September 2016 by Abhijit Kundu, Maitreyi Ray Kanjilal, Arun Bera, Jhuma Kundu
International Conference on Emerging Trends in Informatics and Communication
Foundation of Computer Science USA
ICETIC2016 - Number 1
September 2016
Authors: Abhijit Kundu, Maitreyi Ray Kanjilal, Arun Bera, Jhuma Kundu
f3a3af55-8343-4c46-a477-00130e08b394

Abhijit Kundu, Maitreyi Ray Kanjilal, Arun Bera, Jhuma Kundu . III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication. International Conference on Emerging Trends in Informatics and Communication. ICETIC2016, 1 (September 2016), 28-32.

@article{
author = { Abhijit Kundu, Maitreyi Ray Kanjilal, Arun Bera, Jhuma Kundu },
title = { III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication },
journal = { International Conference on Emerging Trends in Informatics and Communication },
issue_date = { September 2016 },
volume = { ICETIC2016 },
number = { 1 },
month = { September },
year = { 2016 },
issn = 0975-8887,
pages = { 28-32 },
numpages = 5,
url = { /proceedings/icetic2016/number1/25872-4011/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Emerging Trends in Informatics and Communication
%A Abhijit Kundu
%A Maitreyi Ray Kanjilal
%A Arun Bera
%A Jhuma Kundu
%T III-V Nitride based Solid State p-i-n Switch for Application in Millimeter Wave Secure Communication
%J International Conference on Emerging Trends in Informatics and Communication
%@ 0975-8887
%V ICETIC2016
%N 1
%P 28-32
%D 2016
%I International Journal of Computer Applications
Abstract

This paper presents a new monolithic gallium nitride based p-i-n diode model which enhances the power handling capacity and bandwidth in millimeter wave (MMW) communication. The proposed model is simulated at bias current of 2 milliampere in 1. 24 ohm series resistance to obtain insertion loss, isolation and return loss. Transit time analysis is also required to improve the performance of the switch and all these simulated results are compared to the standard measured value. A series connected Single Pole Single Throw (SPST) switch is implemented using p-i-n diode to get low insertion loss, low return loss and better isolation at high frequency. This radio frequency switch is more useful to deliver the radio frequency signal from one transmitter to N- number of receiver at 90 gigahertz frequency through 18 gigahertz frequency.

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Index Terms

Computer Science
Information Sciences

Keywords

Gan P-i-n Diode Effective Diffusion Length Stored Charge Intrinsic Impedance Switching Speed Return Loss Insertion Loss Isolation Stored Charge Transfer Function