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In GaAs/GaAsSb Heterojunction TFET

IJCA Proceedings on International Conference on Emerging Trends in Technology and Applied Sciences
© 2015 by IJCA Journal
ICETTAS 2015 - Number 3
Year of Publication: 2015
Arathy Varghese
Ajith Ravindran
Praveen C S

Arathy Varghese, Ajith Ravindran and Praveen C S. Article: In GaAs/GaAsSb Heterojunction TFET. IJCA Proceedings on International Conference on Emerging Trends in Technology and Applied Sciences ICETTAS 2015(3):21-25, September 2015. Full text available. BibTeX

	author = {Arathy Varghese and Ajith Ravindran and Praveen C S},
	title = {Article: In GaAs/GaAsSb Heterojunction TFET},
	journal = {IJCA Proceedings on International Conference on Emerging Trends in Technology and Applied Sciences},
	year = {2015},
	volume = {ICETTAS 2015},
	number = {3},
	pages = {21-25},
	month = {September},
	note = {Full text available}


Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneling barrier height Ebeff. Moderate-stagger GaAs0. 4Sb0. 6/In0. 65Ga0. 35As and high-stagger GaAs0. 35Sb0. 65/In0. 7Ga0. 3As hetj TFETs are analyzed, and their electrical results are compared with the In0. 7Ga0. 3As homojunction (homj) TFET. The GaAs0. 4Sb0. 6/In0. 65Ga0. 35Ashetj TFET achieves 134% enhancement in ION over the In0. 7Ga0. 3As homj TFET at VDS = 0. 5 V. With electrical oxide thickness (Toxe) scaling from 2. 3 to 2 nm,and using a high staggered hetero junction the enhancement further increases to 285%, resulting in a record highION of 135 ?A/?m.


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