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Design of Gate-All-Around Tunnel FET for RF Performance

Published on December 2013 by Kalaivani. P, M. Usharani
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International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
Foundation of Computer Science USA
ICIIIOES - Number 11
December 2013
Authors: Kalaivani. P, M. Usharani
a1532ef5-4cde-4350-9d91-b7d36815d03a

Kalaivani. P, M. Usharani . Design of Gate-All-Around Tunnel FET for RF Performance. International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences. ICIIIOES, 11 (December 2013), 5-9.

@article{
author = { Kalaivani. P, M. Usharani },
title = { Design of Gate-All-Around Tunnel FET for RF Performance },
journal = { International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences },
issue_date = { December 2013 },
volume = { ICIIIOES },
number = { 11 },
month = { December },
year = { 2013 },
issn = 0975-8887,
pages = { 5-9 },
numpages = 5,
url = { /proceedings/iciiioes/number11/14357-1339/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
%A Kalaivani. P
%A M. Usharani
%T Design of Gate-All-Around Tunnel FET for RF Performance
%J International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
%@ 0975-8887
%V ICIIIOES
%N 11
%P 5-9
%D 2013
%I International Journal of Computer Applications
Abstract

This paper presents the design, radio frequency (RF) performance and high frequency stability of Gate-All-Around Tunnel Field Effect Transistor (GAA TFET). The small signal parameters that can be extracted using a non-quasi static small signal model are calculated using extracted parameters from a technology computer-aided design (TCAD) simulation. RF parameters like cut-off frequency (ft), maximum oscillation frequency (fmax) and stability factor (K) are extracted to evaluate the high frequency performance of GAA TFET. The result shows that the GAA TFET has cut-off frequency of 22GHz and unconditionally stable from 1GHz onwards.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Radio Frequency Tunnel Fet Small-signal Model Stability Factor Tcad Simulation.