CFP last date
20 May 2024
Call for Paper
June Edition
IJCA solicits high quality original research papers for the upcoming June edition of the journal. The last date of research paper submission is 20 May 2024

Submit your paper
Know more
The week's pick
Responsive image
Enhancing Privacy Preservation: Multi-Attribute Protection with P-Sensitive K-Anonymity

Twinkle Patel Kiran Amin
Random Articles
Reseach Article

A Physics based Mosfet Noise Model for Nanoscale Applications

Published on December 2013 by P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha
journal_cover_thumbnail

International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
Foundation of Computer Science USA
ICIIIOES - Number 7
December 2013
Authors: P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha
3aeeed6b-49b0-4828-82a8-e7d042f0a6e0

P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha . A Physics based Mosfet Noise Model for Nanoscale Applications. International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences. ICIIIOES, 7 (December 2013), 6-9.

@article{
author = { P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha },
title = { A Physics based Mosfet Noise Model for Nanoscale Applications },
journal = { International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences },
issue_date = { December 2013 },
volume = { ICIIIOES },
number = { 7 },
month = { December },
year = { 2013 },
issn = 0975-8887,
pages = { 6-9 },
numpages = 4,
url = { /proceedings/iciiioes/number7/14326-1593/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
%A P. Suveetha Dhanaselvam
%A N. B. Balamurugan
%A V. Lourdy Nivethitha
%A S. Saranya
%A V. Prathibha
%T A Physics based Mosfet Noise Model for Nanoscale Applications
%J International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
%@ 0975-8887
%V ICIIIOES
%N 7
%P 6-9
%D 2013
%I International Journal of Computer Applications
Abstract

Recently MOSFET has been considered as an important aspirant in the field of VLSI technology since it minimizes short-channel effect. FinFETs are promising substitute for CMOS at the nanoscale for meeting the challenges being posed by the scaling of conventional MOSFET. Continuous scaling of technologies towards the nanometer range will severely enhance noise implication. In this paper, a physics based MOSFET noise model that can accurately predict the noise characteristics over all the three operating regions known as subthreshold region, weak inversion region and strong inversion region is proposed . The physics based expressions for thermal noise has been derived and experimentally verified with corresponding graphs by using MATLAB simulation.

References
  1. Roy. A. S, Enza. CC, Sallese. J-M. "Noise modeling methodologies in the presence of mobility degradation and their equivalence". IEEE Trans Electron Dev 2006;53(2):348-55.
  2. Li Z, Ma J, Ye Y, Yu M. "Compact channel noise model for deep submicron MOSFETs". IEEE Trans Electron Dev 2006; 56(6):1300-8.
  3. Bhattacharyya AB. "Compact MOSFET models for VLSI design". John Wiley & Sons Pte. Ltd. , IEEE Press; 2009.
  4. Roy AS, Enza CC. "Compact modeling of thermal noise in the MOS transistor". IEEE Trans Electron Dev 2005; 52(4):611-4.
  5. G. Ghibaudo. O. Roux, C. Nguyen-Duc, F. Balestra, and J. Brini. "Improved analysis of low frequency noise in field effect MOS transistor". phys stat sol A vol 124, no. 2. pp. 571-581, 1991.
  6. C. H. Chen and M. J. Deen,"Channel noise modeling of deep-submicron MOSFETs", IEEE Trans. Electron Devices vol. 49, no. 8, pp. 1484-1487, Aug. 2002.
  7. M. Lundstrom, "Fundamentals of carrier transport", 2nded. Cambridge, U. K, Cambridge Univ. Press, 2000.
  8. K. Hess,"Phenomenological physics of hot carriers in semiconductors, in physics of nonlinear transport in semiconductors", D. K. Ferry, J. R. Barker and C. Jacoboni, Eds. New York: Plentum, 1980, pp. 1-48
  9. Chengqing Wei, Yong-Zhong Xiong, Senior Member, IEEE, and Xing Zhou. Senior Member, IEEE,"Investigation of Low-Frequency Noise in N-Channel FinFETs from Weak to Strong Inversion"
Index Terms

Computer Science
Information Sciences

Keywords

Finfet Sce Mosfet Thermal Noise.