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Reseach Article

Back Illumination- A Technique to Enhance The Performance of GaAs MESFET

Published on None 2011 by B.K. Mishra, Lochan Jolly, Kalawati Patil
International Conference and Workshop on Emerging Trends in Technology
Foundation of Computer Science USA
ICWET - Number 11
None 2011
Authors: B.K. Mishra, Lochan Jolly, Kalawati Patil
71ad44b2-2fb4-48e4-9d9c-526464128535

B.K. Mishra, Lochan Jolly, Kalawati Patil . Back Illumination- A Technique to Enhance The Performance of GaAs MESFET. International Conference and Workshop on Emerging Trends in Technology. ICWET, 11 (None 2011), 1-6.

@article{
author = { B.K. Mishra, Lochan Jolly, Kalawati Patil },
title = { Back Illumination- A Technique to Enhance The Performance of GaAs MESFET },
journal = { International Conference and Workshop on Emerging Trends in Technology },
issue_date = { None 2011 },
volume = { ICWET },
number = { 11 },
month = { None },
year = { 2011 },
issn = 0975-8887,
pages = { 1-6 },
numpages = 6,
url = { /proceedings/icwet/number11/2150-emdc578/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference and Workshop on Emerging Trends in Technology
%A B.K. Mishra
%A Lochan Jolly
%A Kalawati Patil
%T Back Illumination- A Technique to Enhance The Performance of GaAs MESFET
%J International Conference and Workshop on Emerging Trends in Technology
%@ 0975-8887
%V ICWET
%N 11
%P 1-6
%D 2011
%I International Journal of Computer Applications
Abstract

An analytical model of GaAs metal-semiconductor-field-effect transistor (MESFET) with non uniform doping under back illumination is developed. The model presents the d.c. and a.c. characteristics of GaAs MESFET under back illumination with the fiber inserted up to the active layer-substrate junction. Photovoltaic effects across the Schottky junction and active channel are considered to estimate various characteristics under different illumination conditions. The Continuity equations in the gate depletion and neutral regions are solved analytically. The frequency dependence of photovoltage at the Schottky contact (Vop) is evaluated for estimating the current characteristic under a.c. condition. It has been observed from the results that when GaAs MESFET is illuminated from back an improvement in characteristics over front illumination is experienced due to improved absorption under back illumination.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Photodetector Schottky Junction Back Illumination GaAs OPFET (Optically Illuminated Field-Effect-Transistor)