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TCAD Simulation of Tunnel Field Effect Transistor

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IJCA Proceedings on National Conference on Latest Initiatives and Innovations in Communication and Electronics
© 2017 by IJCA Journal
IICE 2016 - Number 1
Year of Publication: 2017
Authors:
Rockey Bhardwaj
Gurinderpal Singh

Rockey Bhardwaj and Gurinderpal Singh. Article: TCAD Simulation of Tunnel Field Effect Transistor. IJCA Proceedings on National Conference on Latest Initiatives and Innovations in Communication and Electronics IICE 2016(1):14-17, February 2017. Full text available. BibTeX

@article{key:article,
	author = {Rockey Bhardwaj and Gurinderpal Singh},
	title = {Article: TCAD Simulation of Tunnel Field Effect Transistor},
	journal = {IJCA Proceedings on National Conference on Latest Initiatives and Innovations in Communication and Electronics},
	year = {2017},
	volume = {IICE 2016},
	number = {1},
	pages = {14-17},
	month = {February},
	note = {Full text available}
}

Abstract

It is observed that there are two limitations with conventional MOSFET, especially Sub threshold swings and high Ioff current. Subthreshold has minimum value of 60 mV/decade [1]. But we cannot get lower sub-threshold swing than this value with conventional MOSFET. These limitations are overcome by Tunnel Field effect transistors (TFET). TFET is working on tunneling effect, which requires less input voltages to decrease band gap due to presence of p-i-n region. Also there are very low OFF- current in TFET and hence low power consumption. The TFET works on band-to-band tunneling (BTBT) principle. In this paper, principle operation of TFET has been studied, and then simulation of the TFET using Sentaurus TCAD software.

References

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