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Reseach Article

Comparative Study of Technology in Semiconductor Memories-A Review

Published on February 2017 by Aman Kumar, Bobbinpreet Kaur
National Conference on Latest Initiatives and Innovations in Communication and Electronics
Foundation of Computer Science USA
IICE2016 - Number 1
February 2017
Authors: Aman Kumar, Bobbinpreet Kaur
2ad99eb4-3067-4f95-9386-0d4db2453092

Aman Kumar, Bobbinpreet Kaur . Comparative Study of Technology in Semiconductor Memories-A Review. National Conference on Latest Initiatives and Innovations in Communication and Electronics. IICE2016, 1 (February 2017), 21-25.

@article{
author = { Aman Kumar, Bobbinpreet Kaur },
title = { Comparative Study of Technology in Semiconductor Memories-A Review },
journal = { National Conference on Latest Initiatives and Innovations in Communication and Electronics },
issue_date = { February 2017 },
volume = { IICE2016 },
number = { 1 },
month = { February },
year = { 2017 },
issn = 0975-8887,
pages = { 21-25 },
numpages = 5,
url = { /proceedings/iice2016/number1/26951-1669/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 National Conference on Latest Initiatives and Innovations in Communication and Electronics
%A Aman Kumar
%A Bobbinpreet Kaur
%T Comparative Study of Technology in Semiconductor Memories-A Review
%J National Conference on Latest Initiatives and Innovations in Communication and Electronics
%@ 0975-8887
%V IICE2016
%N 1
%P 21-25
%D 2017
%I International Journal of Computer Applications
Abstract

In this paper we will present a review on the development of semiconductor Memories through the most recent decade. Starting demands of low power devices is extending therefore; this is the reason for scaling of CMOS advancement. In view of the scaling, size of the chip diminishments and number of transistor in structure on chip increases. Generally the amount of transistors utilized as a piece of chip to store data so, in future the need of low power memories is growing. The extended enthusiasm for mobile phones has incited amazing examination attempts in the setup and progression of low power circuits. Memories are the critical section in present day for automated systems, for instance, chip and Digital Signal Processors (DSPs) that are utilized as a piece of mobile phones. This paper will give a comparison of SRAM memories cell on the basis of their architecture.

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Index Terms

Computer Science
Information Sciences

Keywords

Sram Cell Low Power Noise Margin Leakage Current