CFP last date
20 May 2024
Call for Paper
June Edition
IJCA solicits high quality original research papers for the upcoming June edition of the journal. The last date of research paper submission is 20 May 2024

Submit your paper
Know more
The week's pick
Responsive image
Enhancing Privacy Preservation: Multi-Attribute Protection with P-Sensitive K-Anonymity

Twinkle Patel Kiran Amin
Random Articles
Reseach Article

Parametric Variation with Doping Concentration in a FinFET using 3D TCAD

Published on October 2014 by Keerti Kumar K, Anil P, Bheema Rao N
journal_cover_thumbnail

International Conference on Microelectronics, Circuits and Systems
Foundation of Computer Science USA
MICRO - Number 3
October 2014
Authors: Keerti Kumar K, Anil P, Bheema Rao N
bc655777-2cf7-49b2-8d07-9805a436d7d4

Keerti Kumar K, Anil P, Bheema Rao N . Parametric Variation with Doping Concentration in a FinFET using 3D TCAD. International Conference on Microelectronics, Circuits and Systems. MICRO, 3 (October 2014), 21-23.

@article{
author = { Keerti Kumar K, Anil P, Bheema Rao N },
title = { Parametric Variation with Doping Concentration in a FinFET using 3D TCAD },
journal = { International Conference on Microelectronics, Circuits and Systems },
issue_date = { October 2014 },
volume = { MICRO },
number = { 3 },
month = { October },
year = { 2014 },
issn = 0975-8887,
pages = { 21-23 },
numpages = 3,
url = { /proceedings/micro/number3/18327-1825/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Microelectronics, Circuits and Systems
%A Keerti Kumar K
%A Anil P
%A Bheema Rao N
%T Parametric Variation with Doping Concentration in a FinFET using 3D TCAD
%J International Conference on Microelectronics, Circuits and Systems
%@ 0975-8887
%V MICRO
%N 3
%P 21-23
%D 2014
%I International Journal of Computer Applications
Abstract

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

References
  1. Hisamoto, D. ; Wen-Chin Lee; Kedzierski, J. ; Takeuchi, H. ; Asano, K. ; Kuo, C. ; Anderson, Erik; Tsu-Jae King; Bokor, J. ; Chenming Hu, "FinFET-a self-aligned double-gate MOSFET scalable to 20 nm," Electron Devices, IEEE Transactions on , vol. 47, no. 12, pp. 2320,2325, Dec 2000.
  2. Xuejue Huang; Wen-Chin Lee; Kuo, C. ; Hisamoto, D. ; Chang, L. ; Kedzierski, J. ; Anderson, Erik; Takeuchi, H. ; Choi, Yang-Kyu; Asano, K. ; Subramanian, Vivek; Tsu-Jae King; Bokor, J. ; Chenming Hu, "Sub-50 nm P-channel FinFET," Electron Devices, IEEE Transactions on , vol. 48, no. 5, pp. 880,886, May 2001.
  3. Nowak, E. J. ; Aller, I. ; Ludwig, T. ; Keunwoo Kim; Joshi, R. V. ; Ching-Te Chuang; Bernstein, K. ; Puri, R. , "Turning silicon on its edge [double gate CMOS/FinFET technology]," Circuits and Devices Magazine, IEEE , vol. 20, no. 1, pp. 20,31, Jan-Feb 2004.
  4. N. Bresson, S. Cristoloveanu, C. Mazure, F. Letertre, H. Iwai, "Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effects" Solid-State Electronics, vol. 49, Issue 9, pp. 1522–1528, September 2005.
  5. Katsumata, R. ; Tsuda, N. ; Idebuchi, J. ; Kondo, M. ; Aoki, N. ; Ito, S. ; Yahashi, K. ; Satonaka, T. ; Morikado, M. ; Kito, M. ; Kido, M. ; Tanaka, T. ; Aochi, H. ; Hamamoto, T. , "Fin-Array-FET on bulk silicon for sub-100 nm trench capacitor DRAM," VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on , vol. , no. , pp. 61,62, 10-12 June 2003.
  6. Jurczak, M. ; Collaert, N. ; Veloso, A. ; Hoffmann, T. ; Biesemans, S. , "Review of FINFET technology," SOI Conference, 2009 IEEE International , vol. , no. , pp. 1,4, 5-8 Oct. 2009.
  7. Kuhn, K. J. ; Liu, M. Y. ; Kennel, H. , "Technology options for 22nm and beyond," Junction Technology (IWJT), 2010 International Workshop on , vol. , no. , pp. 1,6, 10-11 May 2010.
  8. Liu Enfeng,Liu Xiaoyan and Han Ruqi, "3-D Simulation of FINFET," Chinese Journal of Semiconductors,vol. 23,no-9,sep 2002.
Index Terms

Computer Science
Information Sciences

Keywords

Subthreshold Slope Dibl Transconductance Ioff Doping Concentration Finfet.