The week's pick
Reseach Article
TCAD Assessment of Oxide Impact on Linearity and Harmonic Distortions in Gate All Around (GAA) MOSFET
| International Conference on Microelectronic Circuit and System |
| Foundation of Computer Science USA |
| MICRO2017 - Number 1 |
| December 2018 |
| Authors: Akansha Goyal, Sonam Rewari, R. S. Gupta, Satvir Deswal |
| 62814f19-05c3-4df5-8e5d-3f0f7578af4c |
Akansha Goyal, Sonam Rewari, R. S. Gupta, Satvir Deswal . TCAD Assessment of Oxide Impact on Linearity and Harmonic Distortions in Gate All Around (GAA) MOSFET. International Conference on Microelectronic Circuit and System. MICRO2017, 1 (December 2018), 37-42.
Abstract
In this paper for the first time the effect of different oxides namely Hafnium Oxide (HfO2), Silicon Oxide (SiO2) and air have been studied and analyzed for Gate All Around (GAA) MOSFET in context of linearity and harmonic distortions and high frequency operation. Various linearity metrics such as third order derivative of transconductance (gm3), VIP2, VIP3 and IIP3 have been studied and analyzed for GAA MOSFET using different dielectrics. We have also studied Maximum Transducer Power Gain (MTPG), Unilateral Power Gain (UPG), gate capacitance (CGG) and maximum cut off frequency (fTmax). Along with linearity metrics various analog metrics have been examined like drain currents (Ids), ON to OFF current ratio, transconductance and output conductance. Hafnium Oxide (HfO2) is more suitable for analog applications and air is more suitable as a dielectric for high linearity applications.
References
- B. Razavi, RF Microelectronics. Upper Saddle River, NJ, USA: Prentice-Hall, 1998.
- Lee TH, CMOS RF: (still) no longer an oxymoron. In: Proc of Symp on RFIC; 1999, p. 3–6.
- Woerlee PH, Knitel MJ, van Langevelde R, Klaassen DBM, Tiemeijer LF, Scholten AJ, et al. RF-CMOS performance trends. IEEE Trans Electron Dev 2001; 48:776–1782.
- Niu G, Liang Q, Cressler JD, Webster CS, Harame DL. RF linearity characteristics of SiGe HBTs. IEEE Trans Microw Theory Tech 2001; 49:1558–65.
- Kang S, Choi B, Kim B. Linearity analysis of CMOS for RF application. IEEE Trans Microw Theory Tech 2003; 51:972–7.
- Bennett HS, Brederlow R, Costa JC, Cottrell PE, Huang WM, Immorlica Jr AA,et al. Device and technology evolution for Si-based RF integrated circuits. IEEE Trans Electron Dev 2005; 52:1235–58.
- K. Sanghoon, C. Byounggi, and K. Bumman, "Linearity analysis of CMOS for RF application," IEEE Trans. Microw. Theory Tech. , vol. 51, no. 3, pp. 972–977, Mar. 2003.
- P. H. Woerlee, M. J. Knitel, R. van Langevelde, D. B. M. Klaassen, L. F. Tiemeijer, A. J. Scholten, and A. T. A. Zegers-van Duijnhoven, (2001) "RF-CMOS performance trends", IEEE Transactions on Electron Devices, Vol 48, 8, pp. 1776 – 1782.
- W. Ma, and S. Kaya, (2003) "Study of RF Linearity in sub-50nm MOSFETs using Simulations", Journal of Computational Electronics 2, pp. 347-352.
- S. Kaya, W. Ma, and A. Asenov, (2003) "Design of DG-MOSFETs for High Linearity Performance" IEEE International SOI Conference, pp. 68-69.
- ATLAS User's Manual: 3-D device Simulator, Silvaco Inc. , Santa Clara, CA, USA, 2015.
- R. Lin, Q. Lu, P. Ranade, T. J. King, C. Hu, Anadjustable workfunction technology using Mo gate for CMOS devices, IEEE Electron Devices Lett. , vol. 23, no. 1, pp. 49–51, January 2002.
- J. W. Han, J. H. Ahn, and Y. K. Choi, "Damage immune field effect transistors with vacuum gate dielectric," J. Vacuum Sci. Technol. B, vol. 29, no. 1, pp. 011014-1–011014-4, Jan. 2011.
- Sonam Rewari, Subhasis Haldar, , Vandana Nath, S. S. Deswal, and R. S. Gupta "Numerical Modeling of Subthreshold Region of Junctionless Double Surrounding Gate MOSFET (JDSG) ,". Superlattices and Microstructures Journal, vol. 90, pp 8-19, Feb 2016.
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