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Review of Junctionless transistor using CMOS Technology and MOSFETs

IJCA Proceedings on National Conference on Innovative Paradigms in Engineering and Technology (NCIPET 2012)
© 2012 by IJCA Journal
ncipet - Number 4
Year of Publication: 2012
Shridhar R. Sahu

Shridhar R Sahu. Article: Review of Junctionless transistor using CMOS technology and MOSFETs. IJCA Proceedings on National Conference on Innovative Paradigms in Engineering and Technology (NCIPET 2012) ncipet(4):8-11, March 2012. Full text available. BibTeX

	author = {Shridhar R. Sahu},
	title = {Article: Review of Junctionless transistor using CMOS technology and MOSFETs},
	journal = {IJCA Proceedings on National Conference on Innovative Paradigms in Engineering and Technology (NCIPET 2012)},
	year = {2012},
	volume = {ncipet},
	number = {4},
	pages = {8-11},
	month = {March},
	note = {Full text available}


Transistors are the fundamental building blocks of modern electronic devices and all existing transistors contain semiconductor junctions. Junctionless transistor is a uniformly doped nanowire without junctions with a wrap-around gate. As the distance between junctions in modern devices drops below 10nm, extraordinarily high doping concentration gradients become necessary. Junctionless transistors could therefore help chipmakers continue to make smaller devices. Here, in this paper presented a new type of transistor in which there are no junctions and no doping concentration gradients. They have near-ideal sun threshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.


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