Call for Paper - November 2019 Edition
IJCA solicits original research papers for the November 2019 Edition. Last date of manuscript submission is October 21, 2019. Read More

Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection

Print
PDF
IJCA Proceedings on National Conference on Recent Trends in Electronics and Electrical Engineering
© 2018 by IJCA Journal
NCRTEEE 2017 - Number 1
Year of Publication: 2018
Authors:
Trilok Kumar Parashar

Trilok Kumar Parashar. Article: Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection. IJCA Proceedings on National Conference on Recent Trends in Electronics and Electrical Engineering NCRTEEE 2017(1):18-21, August 2018. Full text available. BibTeX

@article{key:article,
	author = {Trilok Kumar Parashar},
	title = {Article: Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection},
	journal = {IJCA Proceedings on National Conference on Recent Trends in Electronics and Electrical Engineering},
	year = {2018},
	volume = {NCRTEEE 2017},
	number = {1},
	pages = {18-21},
	month = {August},
	note = {Full text available}
}

Abstract

Numerical computation has been carried out for theoretical characterization of a p+-InSb/n0-InSb/n+-InSb photodiode at 300 K for operation in 4. 0 ?m to 4. 5 ?m wavelength region. The different components of the dark current and the R0A products have been calculated using the theoretical model discussed above. In present work the the R0A product as well as the other major parameters of the p+-InSb/n0-InSb/n+-InSbgas detectors such as quantum efficiency, responsivity and detectivity have been estimated quantitatively. The peak detectivity has been estimated to be ~ 6. 8 ? 107 mHz1/2/W and efficiency obtained on the basis of this model with their peaks at 4. 2 µm wavelength, which reveals that this detector is best suited for detection of CO2 gas.

References

  • Gao,H. H. KrierA. , SherstnevV. V. ,2000. "Room temperature InAs0:89Sb0:11 photodetectors for CO detection at 4. 6µm", Appl. Phys. Lett. 77 pp. 872–874.
  • Rogalski, AdamiecK. , and RutkowskiJ, 2000. "Narrow-Gap Semiconductor Photodiode", (SPIE, Bellingham, USA.
  • Rogalski,1994. "New trends in semiconductor infrared detectors", Opt. Eng. 33, 1395–1412.
  • ChakrabartiP. , SaxenaP. K. &Lal R. K, 2006. "Analytical Simulation of an InAsSb photovoltaic Detector for Mid-Infrared Applications", Int J Infrared Milli Waves, 27,1119-1132.
  • Ibrahim Kimukin, NecmiBiyikli and EkmelOzbay, 2003. "InSb high-speed photodetectors grown on GaAs substrate", J. of Appl. Phy. , No. 94, 8, pp 5414-5416,
  • Anderson, W. W. ,. J. 1980. Infrared Phys. 20, 363.
  • ParasharT. K. and. Lal,R. K 2011. "Theoretical modelling of InP based photodetector for hydrogen fluoride gas detection in short wavelength region", Optoelectronics And Advanced Materials – Rapid Communications Vol. 5, No. 7, pp. 732 – 737.
  • LevinshteinM. , RumyantsevS. , and Shur(Eds. ): M. 1999. . Hand book series on Semiconductor Parameters, vol. 1 and 2, World Scientific, London.
  • Rakovska, V. Berger, X. Marcadet, B. Vinter, K. Bouzehouane and Kaplan D. , 2000. "Optical charecterization and room temperature life time measurements of high quality MBE-grown InAsS on Gasb", Semiconductor Science and Technology, vol. 15, pp. 34-39.
  • . ParasharT. K and Lal R. K. , 2011. "Modeling and Simulation of HgCdTe based photodetector for N2O gas detection", Journal of Electron Devices, Vol. 11, pp. 527-537.
  • http://webbook. nist. gov/chemistry
  • http://www. ioffe. rssi. ru/SVA/NSM.