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Reseach Article

Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection

Published on August 2018 by Trilok Kumar Parashar
National Conference on Recent Trends in Electronics and Electrical Engineering
Foundation of Computer Science USA
NCRTEEE2017 - Number 1
August 2018
Authors: Trilok Kumar Parashar
13e50216-88f0-4939-b043-bd42c97e1aea

Trilok Kumar Parashar . Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection. National Conference on Recent Trends in Electronics and Electrical Engineering. NCRTEEE2017, 1 (August 2018), 18-21.

@article{
author = { Trilok Kumar Parashar },
title = { Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection },
journal = { National Conference on Recent Trends in Electronics and Electrical Engineering },
issue_date = { August 2018 },
volume = { NCRTEEE2017 },
number = { 1 },
month = { August },
year = { 2018 },
issn = 0975-8887,
pages = { 18-21 },
numpages = 4,
url = { /proceedings/ncrteee2017/number1/29886-1708/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 National Conference on Recent Trends in Electronics and Electrical Engineering
%A Trilok Kumar Parashar
%T Theoretical Modelling Of Infrared Photodetector for CO2 Gas Detection
%J National Conference on Recent Trends in Electronics and Electrical Engineering
%@ 0975-8887
%V NCRTEEE2017
%N 1
%P 18-21
%D 2018
%I International Journal of Computer Applications
Abstract

Numerical computation has been carried out for theoretical characterization of a p+-InSb/n0-InSb/n+-InSb photodiode at 300 K for operation in 4. 0 ?m to 4. 5 ?m wavelength region. The different components of the dark current and the R0A products have been calculated using the theoretical model discussed above. In present work the the R0A product as well as the other major parameters of the p+-InSb/n0-InSb/n+-InSbgas detectors such as quantum efficiency, responsivity and detectivity have been estimated quantitatively. The peak detectivity has been estimated to be ~ 6. 8 ? 107 mHz1/2/W and efficiency obtained on the basis of this model with their peaks at 4. 2 µm wavelength, which reveals that this detector is best suited for detection of CO2 gas.

References
  1. Gao,H. H. KrierA. , SherstnevV. V. ,2000. "Room temperature InAs0:89Sb0:11 photodetectors for CO detection at 4. 6µm", Appl. Phys. Lett. 77 pp. 872–874.
  2. Rogalski, AdamiecK. , and RutkowskiJ, 2000. "Narrow-Gap Semiconductor Photodiode", (SPIE, Bellingham, USA.
  3. Rogalski,1994. "New trends in semiconductor infrared detectors", Opt. Eng. 33, 1395–1412.
  4. ChakrabartiP. , SaxenaP. K. &Lal R. K, 2006. "Analytical Simulation of an InAsSb photovoltaic Detector for Mid-Infrared Applications", Int J Infrared Milli Waves, 27,1119-1132.
  5. Ibrahim Kimukin, NecmiBiyikli and EkmelOzbay, 2003. "InSb high-speed photodetectors grown on GaAs substrate", J. of Appl. Phy. , No. 94, 8, pp 5414-5416,
  6. Anderson, W. W. ,. J. 1980. Infrared Phys. 20, 363.
  7. ParasharT. K. and. Lal,R. K 2011. "Theoretical modelling of InP based photodetector for hydrogen fluoride gas detection in short wavelength region", Optoelectronics And Advanced Materials – Rapid Communications Vol. 5, No. 7, pp. 732 – 737.
  8. LevinshteinM. , RumyantsevS. , and Shur(Eds. ): M. 1999. . Hand book series on Semiconductor Parameters, vol. 1 and 2, World Scientific, London.
  9. Rakovska, V. Berger, X. Marcadet, B. Vinter, K. Bouzehouane and Kaplan D. , 2000. "Optical charecterization and room temperature life time measurements of high quality MBE-grown InAsS on Gasb", Semiconductor Science and Technology, vol. 15, pp. 34-39.
  10. . ParasharT. K and Lal R. K. , 2011. "Modeling and Simulation of HgCdTe based photodetector for N2O gas detection", Journal of Electron Devices, Vol. 11, pp. 527-537.
  11. http://webbook. nist. gov/chemistry
  12. http://www. ioffe. rssi. ru/SVA/NSM.
Index Terms

Computer Science
Information Sciences

Keywords

Detectivity Responsivity Efficiency Gas Detector