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Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating

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Novel Aspects of Digital Imaging Applications
© 2011 by IJCA Journal
ISBN: 978-93-80865-47-9
Year of Publication: 2011
Authors:
C.Benin Pratap
Dr. S. Suresh Kumar
G. Shine Let
10.5120/4155-319

C.Benin Pratap, Dr. Suresh S Kumar and Shine G Let. Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating. IJCA Special Issue on Novel Aspects of Digital Imaging Applications (DIA) (1):36–39, 2011. Full text available. BibTeX

@article{key:article,
	author = {C.Benin Pratap and Dr. S. Suresh Kumar and G. Shine Let},
	title = {Thermal Analysis of ZVS Switching Techniques on Semiconductor Devices Rating},
	journal = {IJCA Special Issue on Novel Aspects of Digital Imaging Applications (DIA)},
	year = {2011},
	number = {1},
	pages = {36--39},
	note = {Full text available}
}

Abstract

This paper endeavours to estimate the influence of soft switching on semi-conductor devices’ rating, when they are subjected to high frequency applications. In order to find out the extent of saving in semiconductor devices losses, soft switched circuits were studied and analyzed. An experimental set up which could be operated both in hard-switching and soft-switching modes were chosen. Specific switching devices, namely MOSFETs were selected. The ageing of the semiconductor devices was correlated with the rise in temperature of the casing of the devices. The cutoff point for the experiment was the knee region where the thermal runaway would start. This experiment was conducted on two MOSFETs at two frequencies.

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