CFP last date
20 May 2024
Reseach Article

Review on Darlington Transistor for Recent Modern Application

by Sanyokita Singh, Braj Bihari Soni, Puran Gour
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 112 - Number 10
Year of Publication: 2015
Authors: Sanyokita Singh, Braj Bihari Soni, Puran Gour
10.5120/19699-0886

Sanyokita Singh, Braj Bihari Soni, Puran Gour . Review on Darlington Transistor for Recent Modern Application. International Journal of Computer Applications. 112, 10 ( February 2015), 1-3. DOI=10.5120/19699-0886

@article{ 10.5120/19699-0886,
author = { Sanyokita Singh, Braj Bihari Soni, Puran Gour },
title = { Review on Darlington Transistor for Recent Modern Application },
journal = { International Journal of Computer Applications },
issue_date = { February 2015 },
volume = { 112 },
number = { 10 },
month = { February },
year = { 2015 },
issn = { 0975-8887 },
pages = { 1-3 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume112/number10/19699-0886/ },
doi = { 10.5120/19699-0886 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T22:49:04.166250+05:30
%A Sanyokita Singh
%A Braj Bihari Soni
%A Puran Gour
%T Review on Darlington Transistor for Recent Modern Application
%J International Journal of Computer Applications
%@ 0975-8887
%V 112
%N 10
%P 1-3
%D 2015
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Recently, the rising the demand of Darlington products for the high data rate communication system. Darlington transistors are used in applications where a high gain is needed at a low frequency. Recently Darlington cell and Darlington topology have been reported high gain and good bandwidth for modern application. In modern communication Darlington amplifier is versatile used in low noise amplifier, distributed amplifier, broadband mixer, power amplifier and active balunes. Today technology required high speed transmission efficiency with less power consumption and less circuitry to used, Darlington amplifier satisfy all parameters so that review and future advancement required. In these papers designing, application, issues and recent trends of Darlington amplifier is reviewed; we have surveyed almost all the Possible Work Done in Darlington transistors in Past Decades.

References
  1. Chin-Wei Kuo, et. al, "An 18 to 33 GHz Fully-Integrated Darlington Power Amplifier with Guanella-Type transmission-Line Transformers in 0. 18 CMOS Technology" IEEE Microwave and Wireless Components Letters, pp 1-3
  2. Kuei-Cheng Lin,et. al, "A 4. 2-mW 6-dB Gain 5–65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver" IEEE Transactions On Microwave Theory And Techniques, VOL. 61, NO. 4, APRIL 2013,pp 1516-1522
  3. Sven Karsten Hampel, Member, IEEE, et. al, "9-GHz Wideband CMOS RX and TX Front-Ends for Universal Radio Applications "IEEE Transactions On Microwave Theory And Techniques, VOL. 60, NO. 4, APRIL 2012 1105
  4. Shou-Hsien Weng "Gain-Bandwidth Analysis of Broadband Darlington Amplifiers in HBT-HEMT Process" IEEE Transactions on Microwave Theory and Techniques, VOL. 60, NO. 11, NOV 2012, pp 3458-3473.
  5. S. Kaeriyama, Y. Amamiya, et. al. "A 40 Gb/s multi-data-rate CMOS transmitter and receiver chipset with SFI-5 interface for optical transmission systems," IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3568–3579,Dec. 2009.
  6. M. Yoneyama, et. al, "Fully electrical 40-Gb/s TDM system prototype based on InP HEMT digital IC technologies," J. Lightw. Technol. , vol. 18, no. 1, pp. 1262–1268, Jan. 2000.
  7. S. Mohammadi, et. al. "Design optimization and characterization of high-gain GaInP / GaAs HBT distributed amplifiers for high-bit-rate telecommunication," IEEE Trans. Microwave. Theory Technology. vol. 48, no. 6, pp. 1038–1044, Jun. 2000.
  8. D. A. Hodges, et. al "Darlington's contributions to transistor circuit design,"IEEE Trans. Circuits System. Theory and Appl. , vol. 46, no. 1, pp. 102–104, Jan. 1999.
  9. K. W. Kobayashi,et. al "A novel monolithic LNA integrating a common-source HEMT with an HBT Darlington amplifier," IEEE Microw. Guided Wave Letter. vol. 5, no. 12, pp. 442–444, Dec. 1995.
  10. J. Lee and J. D. et. al, "Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology, "IEEE Trans. Microwave. Theory Technology. vol. 54, no. 3, pp. 1262–1268, Mar. 2006.
  11. K. W. Kobayashi, et. al, "A novel HBT distributed amplifier design topology based on attenuation compensation techniques," IEEE Trans. Microwave. Theory Techn. , vol. 42, no. 12, pp. 2583–2589, Dec. 1994.
  12. M. -D. Tsai, et. al, "Broad-band MMICs based on modified loss-compensation method using 0. 35m SiGe BiCMOS technology," IEEE Trans. Microwave. Theory Techn. , vol. 53,no. 2, pp. 496–505, Feb. 2005.
  13. K. W. Kobayashi, et. al"1-Watt conventional and cascoded GaN-SiC Darlington MMIC amplifiers to 18 GHz," in IEEE RFIC Symp. , Jun. 2007, pp. 585–588.
  14. S. -H. Weng, H. -Y. Chang, and C. -C. Chiong, "A DC–21 GHz low imbalance active balun using Darlington cell technique for high Speed data communications," IEEE Microw. Wireless Compon. Lett. , vol. 19,no. 11, pp. 728–730, Nov. 2009.
  15. K. W. Kobayashi, R. Esfandiari, M. E. Hafizi, D. C. Streit, A. K. Oki,L. T. Tran, D. K. Umemoto, and M. E. Kim, "GaAs HBT widebandmatrix distributed and Darlington feedback amplifiers to 24 GHz," IEEE Trans. Microw. Theory Techn. , vol. 39, no. 12, pp. 2001–2009, Dec. 1991.
  16. K. W. Kobayashi, et. al, "GaAs HBT MMIC broadband amplifiers from dc to 20 GHz," in IEEE Microw. Millim. -Wave Monolithic Circuits Symp. ,May 1990, pp. 19–22.
  17. K. W. Kobayashi, et. al "GaAs heterojunction bipolar transistor MMIC dc to 10 GHz direct-coupled feedback amplifier," in GaAs IC Symp. ,Oct. 1989, pp. 87–90.
  18. N. H. Sheng, et. al, "A 30 GHz bandwidth AlGaAs–GaAs HBT direct coupled feedback amplifier," IEEE Microwave Guided Wave Lett. vol. 1, no. 8, pp. 208–210, Aug. 1991.
  19. Y. Kuriyama,et. al "DC to 40 GHz broadband amplifiers using Al-GaAs/GaAs HBT's," IEEE J. Solid-State Circuits, vol. 30, no. 10, pp. 1051–1054, Oct. 1995.
Index Terms

Computer Science
Information Sciences

Keywords

Darlington cell Hetero junction bipolar transistor (HBT) high electron-mobility transistor (HEMT) Analog period RF period