CFP last date
20 June 2024
Reseach Article

Design and Analysis of a Novel Ultra-Low Power SRAM Bit-Cell at 45nm CMOS Technology for Bio-Medical Implants

by Jyoti Yadav, Neeraj Kr Shukla, Pulkit Bhatnagar, Shilpi Birla
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 115 - Number 18
Year of Publication: 2015
Authors: Jyoti Yadav, Neeraj Kr Shukla, Pulkit Bhatnagar, Shilpi Birla
10.5120/20248-2615

Jyoti Yadav, Neeraj Kr Shukla, Pulkit Bhatnagar, Shilpi Birla . Design and Analysis of a Novel Ultra-Low Power SRAM Bit-Cell at 45nm CMOS Technology for Bio-Medical Implants. International Journal of Computer Applications. 115, 18 ( April 2015), 1-6. DOI=10.5120/20248-2615

@article{ 10.5120/20248-2615,
author = { Jyoti Yadav, Neeraj Kr Shukla, Pulkit Bhatnagar, Shilpi Birla },
title = { Design and Analysis of a Novel Ultra-Low Power SRAM Bit-Cell at 45nm CMOS Technology for Bio-Medical Implants },
journal = { International Journal of Computer Applications },
issue_date = { April 2015 },
volume = { 115 },
number = { 18 },
month = { April },
year = { 2015 },
issn = { 0975-8887 },
pages = { 1-6 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume115/number18/20248-2615/ },
doi = { 10.5120/20248-2615 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T22:55:10.944159+05:30
%A Jyoti Yadav
%A Neeraj Kr Shukla
%A Pulkit Bhatnagar
%A Shilpi Birla
%T Design and Analysis of a Novel Ultra-Low Power SRAM Bit-Cell at 45nm CMOS Technology for Bio-Medical Implants
%J International Journal of Computer Applications
%@ 0975-8887
%V 115
%N 18
%P 1-6
%D 2015
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Bio-Implantable Microsystems such as the cardiac pacemaker, retinal and neural implant provides substitute for a missing biological part, support an impaired biological structure or even upgrade the existing biological system. These microsystems require ultra-low power miniature integrated circuit technology for long term reliable operation. For energy constraint applications like the implantable devices, the performance requirement are secondary factors while energy efficiency, low power, high density and high robustness are of primary concern. For low power operation, scaling the supply voltage into sub-threshold region is possible and is an effective technique for power reduction. Implantable devices require minimum energy consumption and prolonged battery lifetime. So these systems demand low leakage currents without sacrificing much on performance. In this work a new 9T MTIP3 SRAM Bit-Cell is proposed at 45nm CMOS technology using multi-threshold (MTCMOS) design technique. The static power saving in MTIP3 is 99. 83% as compared to conventional 6T and 23. 82% as compared to IP3 at VDD=0. 8V. The dynamic power saving of read1 in MTIP3 is 86. 37% as compared to 6T. The dynamic power saving of write1 in MTIP3 is 66. 23% as compared to IP3. The access time of MTIP3 is 16. 94% less than 6T. The energy saving during hold mode in MTIP3 is 99. 5% as compared to 6T. Static Noise Margins are improved by 2. 07% compared to IP3 at VDD =0. 7V.

References
  1. Narasimhan S. , Chiel H. J. , and BhuniaSwarup, "Ultra-Low-Power and Robust Digital-Signal-Processing Hardware for Implantable Neural Interface Microsystems," IEEE Trans. Biomed. Circuits Syst. , vol. 5, No. 2, pp. 169-178, Apr. 2011.
  2. Wang Bo, Zhou Jun, and Kim Tony T. , "Maximization of SRAM Energy Efficiency Utilizing MTCMOS Technology," 4th Asia Symp. 2012 IEEE Quality Electronic Design Conf. , Penang, pp. 35-40, 10-11 July 2012.
  3. Hashemian Maryam S. . , and BhuniaSwarup, "Ultralow-Power and Robust Embedded Memory for Bioimplantable Microsystems," IEEE Computer Society, 26th Int. Conf. on VLSI Design and 12th Int. Conf. on Embedded Systems, Pune India, pp. 66-71, 5-10 Jan. 2013.
  4. Verma N. , and Chandrakasan A. P. , "A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy," IEEE J. Solid-State Circuits, vol. 43, No. 1, pp. 141-149, Jan. 2008.
  5. SridharaSrinivasa R. , DiRenzo Michael, Lingam Srinivas, Lee Seok-Jun, BlázquezRaúl, Mxey Jay, GhanemSamer, Lee Yu-Hung, Abdallah Rami, Singh Prashant, and Goel Manish, "Microwatt Embedded Processor Platform for Medical System-on-Chip Applications," IEEE J. Solid-State Circuits, vol. 46, No. 4, pp. 721-730, Apr. 2011.
  6. Sharifkhani Mohammad and SachdevManoj, "An Energy Efficient 40 Kb SRAM Module With Extended Read/Write Noise Margin in 0. 13 um CMOS," IEEE J. Solid-State Circuits. , vol. 44, No. 2, pp. 620-630, Feb 2009.
  7. Kim Tea-Hyoung, Liu J. , and Kim C. H. , "An 8T subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement," IEEE Custom Integrated Circuits Conf. , San Jose, pp. 241-244,16-19 Sept. 2007.
  8. Chen Hu, Jun Yang, Meng Zhang and Xiulong Wu, "A 12T subthreshold SRAM Bit-cell for Medical Device Application," Int. Cyber-Enabled Dis-tributed Computing and Knowledge Discovery Conf. , Beijing, pp. 540-543, 10-12 Oct. 2011.
  9. Marsam Eric D. , KubbaSundus, carichner Gordon A. , "A DSP Algo for cochlear implants," Giraud B. , Amara A. , and Vladimirescu A. ," Int. Symp. 2006 IEEE Circuits and Systems Conf. , Island of Kos, pp. 657-660, 21-24 May 2006.
  10. Lee ShuennYuh, Su Mario Yu Cheng, , Liang Ming-Chun, Chen You-Yin, Hsieh Cheng-Han, Yang Chung-Min, Lai Hsin-Yi, Jou-Wei, and Fang, Qiang, "A Programmable Implantable MicrostimulatorSoCWithWireless Telemetry: Application in Closed-Loop Endocardial Stimulation for Cardiac Pacemaker," IEEE Trans. on Bio-Medical Circuits and Syst. , vol. 5, No. 6, pp. 511-522, Dec. 2011.
  11. Calhounand Benton Highsmith and ChandrakasanAnantha P. , "A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation," IEEE J. Solid-State Circuits, vol. 42, No. 3, pp. 680-688, Mar. 2007.
  12. RamaniRamnathArun, and Choi Ken, "A Novel 9T SRAM Design in Sub-Threshold Region," IEEE Electro/Information Technology Int. Conf. , Mankato US, pp. 1-6, 15-17 May 2011.
  13. Islam Aminul, Hassan. Mohd. , "Variability Analysis of 6T and 7T SRAM Cell In Sub-45nm Technology," IIUM Engineering Journal, vol. 12, No. 1, pp 13-29, 2011.
  14. Singh R. , Pattanaik M. , and Shukla N. , "Characterization of a Novel Low-Power SRAM Bit-Cell Structure at Deep Sub-Micron CMOS Technology for Multimedia Applications," Scientific Research, vol. 3 No. 1, pp. 23-28, Jan 2012.
Index Terms

Computer Science
Information Sciences

Keywords

6T SRAM Bio-Implants Microsystems MTIP3 SRAM Sub-threshold Region Voltage Scaling.