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Reseach Article

Circumventing Short Channel Effects in FETs: Review

by Khairnar Vinayak Prakash, Abhijeet Kumar, Prerana Jain
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 117 - Number 17
Year of Publication: 2015
Authors: Khairnar Vinayak Prakash, Abhijeet Kumar, Prerana Jain
10.5120/20648-3407

Khairnar Vinayak Prakash, Abhijeet Kumar, Prerana Jain . Circumventing Short Channel Effects in FETs: Review. International Journal of Computer Applications. 117, 17 ( May 2015), 24-30. DOI=10.5120/20648-3407

@article{ 10.5120/20648-3407,
author = { Khairnar Vinayak Prakash, Abhijeet Kumar, Prerana Jain },
title = { Circumventing Short Channel Effects in FETs: Review },
journal = { International Journal of Computer Applications },
issue_date = { May 2015 },
volume = { 117 },
number = { 17 },
month = { May },
year = { 2015 },
issn = { 0975-8887 },
pages = { 24-30 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume117/number17/20648-3407/ },
doi = { 10.5120/20648-3407 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T22:59:39.405322+05:30
%A Khairnar Vinayak Prakash
%A Abhijeet Kumar
%A Prerana Jain
%T Circumventing Short Channel Effects in FETs: Review
%J International Journal of Computer Applications
%@ 0975-8887
%V 117
%N 17
%P 24-30
%D 2015
%I Foundation of Computer Science (FCS), NY, USA
Abstract

The present paper aims at providing a thorough and yet a collective evaluation of some commendable research works done over the past decade with the aim for reducing short-channel effects (SCE). The necessity for development of these technologies arose as short channel effects such as – Drain-Induced Barrier Lowering (DIBL) and hot carrier effects arises manifold as the channel length is scaled further into the deep-submicron region to accommodate changes in ULSI applications. The review highlights some recent techniques to circumvent these effects in fabricated MOS devices, and in addition a short evaluation of strengths and weakness in each research works is also presented.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Short-Channel effects (SCE) Silicon on Insulator (SOI) Drain Induced Barrier level (DIBL) deep-submicron ULSI.