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Temperature Oriented Design of SRAM cell using CMOS Technology

International Journal of Computer Applications
© 2015 by IJCA Journal
Volume 122 - Number 15
Year of Publication: 2015
Rukkumani V
Devarajan N

Rukkumani V and Devarajan N. Article: Temperature Oriented Design of SRAM cell using CMOS Technology. International Journal of Computer Applications 122(15):19-23, July 2015. Full text available. BibTeX

	author = {Rukkumani V and Devarajan N},
	title = {Article: Temperature Oriented Design of SRAM cell using CMOS Technology},
	journal = {International Journal of Computer Applications},
	year = {2015},
	volume = {122},
	number = {15},
	pages = {19-23},
	month = {July},
	note = {Full text available}


A set of components in a circuit which are called as modules or blocks are connected through interconnections called as 'wires'. Various computational techniques are used to calculate and minimize the area, power and speed. Single IC consists of number of Processing Elements (PE's), which works on various voltage ranges. Due to this the IC power consumption increases, thereby temperature of the chip also increases. The increased temperature in some parts is called as hotspots. The main goal of this paper is to focus on calculation of area, power and hotspot of SRAM memory circuit for 8T and 10T memory cell using Microwind. This may used to design of many complicated memory circuits for various temperature ranges. The Submicron Technology is widely used for designing any complex analog circuits.


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