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32 nm Gate Length FinFET: Impact of Doping

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International Journal of Computer Applications
© 2015 by IJCA Journal
Volume 122 - Number 6
Year of Publication: 2015
Authors:
Neha Somra
Ravinder Singh Sawhney
10.5120/21703-4816

Neha Somra and Ravinder Singh Sawhney. Article: 32 nm Gate Length FinFET: Impact of Doping. International Journal of Computer Applications 122(6):11-14, July 2015. Full text available. BibTeX

@article{key:article,
	author = {Neha Somra and Ravinder Singh Sawhney},
	title = {Article: 32 nm Gate Length FinFET: Impact of Doping},
	journal = {International Journal of Computer Applications},
	year = {2015},
	volume = {122},
	number = {6},
	pages = {11-14},
	month = {July},
	note = {Full text available}
}

Abstract

FinFET, a self–aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1. 5V and Tox=5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm-3. Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.

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