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32 nm Gate Length FinFET: Impact of Doping
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 122 - Number 6 |
| Year of Publication: 2015 |
| Authors: Neha Somra, Ravinder Singh Sawhney |
10.5120/21703-4816
|
Neha Somra, Ravinder Singh Sawhney . 32 nm Gate Length FinFET: Impact of Doping. International Journal of Computer Applications. 122, 6 ( July 2015), 11-14. DOI=10.5120/21703-4816
Abstract
FinFET, a self–aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1. 5V and Tox=5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm-3. Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.
References
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