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A Robust 10T SRAM Cell with Enhanced Read Operation

by Sayeed Ahmad, Naushad Alam, Mohd. Hasan
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 129 - Number 2
Year of Publication: 2015
Authors: Sayeed Ahmad, Naushad Alam, Mohd. Hasan
10.5120/ijca2015906751

Sayeed Ahmad, Naushad Alam, Mohd. Hasan . A Robust 10T SRAM Cell with Enhanced Read Operation. International Journal of Computer Applications. 129, 2 ( November 2015), 7-12. DOI=10.5120/ijca2015906751

@article{ 10.5120/ijca2015906751,
author = { Sayeed Ahmad, Naushad Alam, Mohd. Hasan },
title = { A Robust 10T SRAM Cell with Enhanced Read Operation },
journal = { International Journal of Computer Applications },
issue_date = { November 2015 },
volume = { 129 },
number = { 2 },
month = { November },
year = { 2015 },
issn = { 0975-8887 },
pages = { 7-12 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume129/number2/23043-2015906751/ },
doi = { 10.5120/ijca2015906751 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T23:22:18.560271+05:30
%A Sayeed Ahmad
%A Naushad Alam
%A Mohd. Hasan
%T A Robust 10T SRAM Cell with Enhanced Read Operation
%J International Journal of Computer Applications
%@ 0975-8887
%V 129
%N 2
%P 7-12
%D 2015
%I Foundation of Computer Science (FCS), NY, USA
Abstract

This paper presents a new 10T SRAM cell that has enhanced read speed along with good read and write stability. While the read access time of the proposed cell is 0.72x and 0.83x smaller as compared to the two most popular 10T SRAM cells at 500C; the read SNM is 1.16x and 1.05x higher compared to existing 10T cells. Though the read-write power of the proposed cell is higher with respect to the existing 10T cells; nevertheless, it consumes lower power as compared to the conventional 6T cell. Layout using 45nm technology rule shows that the proposed cell consumes 15% smaller area as compared to popular Schmitt-trigger based 10T SRAM cell. Also, the results of Monte-Carlo simulation show that the proposed cell is more robust against process variations. Therefore, the proposed 10T SRAM cell can be used where the speed and robustness are the primary requirements.

References
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Index Terms

Computer Science
Information Sciences

Keywords

6T-SRAM 10T-SRAM Access Time Monte-Carlo Simulation Noise Margin Variability.

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