Call for Paper - November 2023 Edition
IJCA solicits original research papers for the November 2023 Edition. Last date of manuscript submission is October 20, 2023. Read More

The Design and Optimization of MOSFET Driving Circuit based on Parasitic Parameter

Print
PDF
 
Download Full Text
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 135 - Number 1
Year of Publication: 2016
Authors:
Wei Hong, Yuchen Chen, Zhengming Li
10.5120/ijca2016908230

Wei Hong, Yuchen Chen and Zhengming Li. Article: The Design and Optimization of MOSFET Driving Circuit based on Parasitic Parameter. International Journal of Computer Applications 135(1):5-9, February 2016. Published by Foundation of Computer Science (FCS), NY, USA. BibTeX

@article{key:article,
	author = {Wei Hong and Yuchen Chen and Zhengming Li},
	title = {Article: The Design and Optimization of MOSFET Driving Circuit based on Parasitic Parameter},
	journal = {International Journal of Computer Applications},
	year = {2016},
	volume = {135},
	number = {1},
	pages = {5-9},
	month = {February},
	note = {Published by Foundation of Computer Science (FCS), NY, USA}
}

Abstract

According to the parasitic parameter which was produced by the PCB line of MOSFET's driving circuit, this paper will analyze the circuit principle of driving circuit, and then uses the software Saber to stimulate the circuit, finally verifies the stimulate results and formula under the experimental waveforms and statics.

References

  1. Wang Zhaoan, Liu March. Power electronics [M]. Beijing: China machine press, 2000.30-34.
  2. Shi Xiude. Parasitic parameters of circuit for BOOST converter switches [D]. Harbin Institute of technology, 2012:31
  3. Mei Jun, Zheng Jianyong. Saber simulation model and its application IGBT1 in the solid state switch [J]. Electric power automation equipment.2005 (06): 53
  4. Yin WenChun. DC servo system Study on the application of PWM power amplifier [D].Graduate school of the Chinese Academy of Sciences (Changchun Institute of optical precision machinery and physics), 2004:29-32
  5. Mu Xinhua, Yang Zhiyong. Switching power supply printed circuit board study on the effects of parasitic parameters[J]. Journal of electrical engineering, 2004,24 (11): 121-125.
  6. Xu Chen min, Xu Dehong. SiC MOSFET drive circuit and experimental analysis of [J]. power, 2013 (05): 71
  7. Zhao Q, Stojcic G. Characterization of Cdv/dt induce power loss in synchronous buck DC-DC converters[C]. Applied Power Electronics Conference, Nineteenth Annual IEEE, 2004, 1: 292-297.
  8. Ji Shengru, caught up. MOSFET’s isolated high-speed drive circuit [J]. Electric welding machine, 2013 (37): 6-7
  9. NI Yong, Xu Zhen, etc. A parasitic parameter extraction model and optimization of PCB design [J]. the computer measurement and control, 2010,18 (3): 677-681
  10. Cui Yongsheng, Wang Shishan, On the effects of parasitic parameters on characteristics of EMI filter high frequency output simulation [J]. China electro-technical Institute of power electronics society 11th annual meeting, 2008:1-5
  11. Wu Fengjiang, Sun Li. Electromagnetic interference and suppression of bridge-type power MOSFET [J]. University of Aeronautics and Astronautics journal, 2005,37 (1): 29-33

Keywords

Saber stimulation; Miller effect; driving circuit; parasitic parameter; MOSFET