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The Design and Optimization of MOSFET Driving Circuit based on Parasitic Parameter

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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Year of Publication: 2016
Authors:
Wei Hong, Yuchen Chen, Zhengming Li
10.5120/ijca2016908230

Wei Hong, Yuchen Chen and Zhengming Li. Article: The Design and Optimization of MOSFET Driving Circuit based on Parasitic Parameter. International Journal of Computer Applications 135(1):5-9, February 2016. Published by Foundation of Computer Science (FCS), NY, USA. BibTeX

@article{key:article,
	author = {Wei Hong and Yuchen Chen and Zhengming Li},
	title = {Article: The Design and Optimization of MOSFET Driving Circuit based on Parasitic Parameter},
	journal = {International Journal of Computer Applications},
	year = {2016},
	volume = {135},
	number = {1},
	pages = {5-9},
	month = {February},
	note = {Published by Foundation of Computer Science (FCS), NY, USA}
}

Abstract

According to the parasitic parameter which was produced by the PCB line of MOSFET's driving circuit, this paper will analyze the circuit principle of driving circuit, and then uses the software Saber to stimulate the circuit, finally verifies the stimulate results and formula under the experimental waveforms and statics.

References

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Keywords

Saber stimulation; Miller effect; driving circuit; parasitic parameter; MOSFET