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Transistor Width Size Effect on Voltage Drop and Improve Internal Resistance in CMOS Rectifier

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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Year of Publication: 2016
Authors:
Himshikha Sharma, Braj Bihari Soni
10.5120/ijca2016909440

Himshikha Sharma and Braj Bihari Soni. Article: Transistor Width Size Effect on Voltage Drop and Improve Internal Resistance in CMOS Rectifier. International Journal of Computer Applications 139(11):41-44, April 2016. Published by Foundation of Computer Science (FCS), NY, USA. BibTeX

@article{key:article,
	author = {Himshikha Sharma and Braj Bihari Soni},
	title = {Article: Transistor Width Size Effect on Voltage Drop and Improve Internal Resistance in CMOS Rectifier},
	journal = {International Journal of Computer Applications},
	year = {2016},
	volume = {139},
	number = {11},
	pages = {41-44},
	month = {April},
	note = {Published by Foundation of Computer Science (FCS), NY, USA}
}

Abstract

The proposed work based on the simulation studies for the effect of different width size of transistor on output voltage drop and internal resistance in CMOS rectifier. This paper presents the CMOS rectifier by using two PMOS and NMOS configuration and gives information about miniaturization technology. Hence, increase the width size from 4µm to 1100µm of PMOS and NMOS transistors. The results for 1100µm are 1.20V is better than 750µm width size, and also minimize the internal resistance from 6.17Ω to 4.580Ω in CMOS rectifier. The model was designed and simulated using Microwind software and operated at a frequency of 50Hz with an AC voltage source. A circuit was fabricated with 0.35µm CMOS technology.

References

  1. M.A. Ab Raop, R. Radzaun, M.K. Humzah,.;Rahimi M.K.M.S.,“CADENCE Simulation on the Effect of Transistor Width Size on Internal Resistance in CMOS rectifier Using Two PMOS and NMOS” in IEEE , 2013 (ISIEA 2013) , pp. 144-147.
  2. M.A. Ab Raop, R. Radzaun, M.K. Humzah, Rahimi.M. K. M. S., “Investigation of different width size of transistor on internal resistance and output power in CMOS rectifier using two PMOS and NMOS” in IEEE, 2013 (SCOReD), pp. 417-420.
  3. Ab Roap M. A.; Radzaun R.; Humzah,M. K.; Rahimi M. K. M. S.,” Effect of different widths in CMOS rectifier for low voltage and frequency application” in IEEE, 2012 (ISCAIE 2012), pp.26-28.
  4. K. Kotani and T. Ito, "High efficiency CMOS rectifier circuits for UHF RFIDs using Vth cancellation techniques," in ASIC, 2009. ASICON '09. IEEE 8th International Conference on, 2009, pp. 549-552
  5. Peters C.; Kessling O.; Henrici F.; Ortmanns M.; Manoli Y. ”CMOS integrated highly efficient full wave rectifier” in IEEE, 2007, pp. 2415-2018.
  6. R. Yuan and D. P. Arnold, "Input-powered energy harvesting interface circuits with zero standby power," in Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE, 2011, pp. 1992-1999.
  7. A. S. W. Man, E. S. Zhang, H. T. Chan, V. K. N. Lau, C. Y. Tsui, and H.C. Luong, "Design and Implementation of a Low-power Baseband system for RFID Tag," in Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on, 2007, pp. 1585-1588
  8. Y. Yuan, S. Yin, and F. F. Dai, "A novel low-power input-independent MOS AC/DC charge pump," in Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on, 2005, pp. 380-383 Vol. 1.
  9. Qiang Li, J.Wang and Y.Inoue, “ A two stage CMOS integrated highly efficient rectifier for vibration energy harvesting application” 2014, JICEE Vol. 4 pp336-340.
  10. F.Jiang, D. Guo, L. L. Cheng. “Analysis and design of power generator on passive RFID transponders” Progress in Electromagnetics Research Symposiwm, Hangzhou, China, March 2008.
  11. AUTHORS PROFILE
  12. Himshikha Sharma has received her B.Tech degree in Electronics and Communication Engineering from Alpine Institute of Technology, Ujjain (M.P.). At present she is pursuing M.Tech in VLSI Design and Embedded System. Her area of interest includes low power VLSI design, Embedded systems.
  13. Braj Bihari Soni is working as Assistant Professor in NRI Institute of Information Science and Technology, Bhopal (M.P.).He has received his Bachelor of Technology from Nagaji Institute of Technology and Management, Gwalior, (M.P) and M.Tech degree from NRI Institute of Information Science and Technology, Bhopal, (M.P).

Keywords

AC to DC converter, CMOS rectifier, width size of transistor, MOSFET internal resistance, low frequency. Voltage source.