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Gallium Nitride Nanotube and its Application as Transistors

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International Journal of Computer Applications
© 2012 by IJCA Journal
Volume 47 - Number 14
Year of Publication: 2012
Authors:
Bagavathi Chandrasekara
K A Narayanankutty
10.5120/7259-0347

Bagavathi Chandrasekara and K A Narayanankutty. Article: Gallium Nitride Nanotube and its Application as Transistors. International Journal of Computer Applications 47(14):39-44, June 2012. Full text available. BibTeX

@article{key:article,
	author = {Bagavathi Chandrasekara and K A Narayanankutty},
	title = {Article: Gallium Nitride Nanotube and its Application as Transistors},
	journal = {International Journal of Computer Applications},
	year = {2012},
	volume = {47},
	number = {14},
	pages = {39-44},
	month = {June},
	note = {Full text available}
}

Abstract

In search of opto-electronic nano materials, we often come across Gallium Nitride nanotubes (GaN-NT) with excellent electrical and optical characteristics. Gallium Nitride nanotubes are predominantly semiconducting and have been less explored in its application as a transistor channel through Density Functional Theory (DFT). Comparing Gallium Nitride nanotubes with Boron Nitride nanotubes (BN-NT) and Carbon nanotubes (CNT), we have obtained distinguishing features of Gallium Nitride nanotubes. In this work, Transistor simulation with Gallium Nitride nanotubes has been reported with the nanotube as channel. Properties of various configurations of nanotubes are compared among Carbon, Boron Nitride and Gallium Nitride nanotubes.

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