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Performance Evaluation of MISISFET- TCAD Simulation

by Tarun Chaudhary, Gargi Khanna, Rajeevan Chandel
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 47 - Number 19
Year of Publication: 2012
Authors: Tarun Chaudhary, Gargi Khanna, Rajeevan Chandel
10.5120/7300-0568

Tarun Chaudhary, Gargi Khanna, Rajeevan Chandel . Performance Evaluation of MISISFET- TCAD Simulation. International Journal of Computer Applications. 47, 19 ( June 2012), 45-49. DOI=10.5120/7300-0568

@article{ 10.5120/7300-0568,
author = { Tarun Chaudhary, Gargi Khanna, Rajeevan Chandel },
title = { Performance Evaluation of MISISFET- TCAD Simulation },
journal = { International Journal of Computer Applications },
issue_date = { June 2012 },
volume = { 47 },
number = { 19 },
month = { June },
year = { 2012 },
issn = { 0975-8887 },
pages = { 45-49 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume47/number19/7300-0568/ },
doi = { 10.5120/7300-0568 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T20:42:20.091301+05:30
%A Tarun Chaudhary
%A Gargi Khanna
%A Rajeevan Chandel
%T Performance Evaluation of MISISFET- TCAD Simulation
%J International Journal of Computer Applications
%@ 0975-8887
%V 47
%N 19
%P 45-49
%D 2012
%I Foundation of Computer Science (FCS), NY, USA
Abstract

A novel device n-MISISFET with a 'dielectric stack' instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with biasing for the novel n-MISISFET for various substrate doping concentrations, the effect temperature variation on various electrical characteristics is studied in the paper. The variation of electric field with substrate doping is also studied in this paper. The device is based on the principle of resonant tunneling diode (RTD).

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Index Terms

Computer Science
Information Sciences

Keywords

N-misisfet N-mosfet Rtd.

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