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Effect of Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations

Published on None 2011 by K.K.Nagarajan, N.Vinodhkumar, Dr.R.Srinivasan
journal_cover_thumbnail

International Conference on VLSI, Communication & Instrumentation
Foundation of Computer Science USA
ICVCI - Number 16
None 2011
Authors: K.K.Nagarajan, N.Vinodhkumar, Dr.R.Srinivasan
e7458f7a-b107-4801-84fb-7a29a02176bc

K.K.Nagarajan, N.Vinodhkumar, Dr.R.Srinivasan . Effect of Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations. International Conference on VLSI, Communication & Instrumentation. ICVCI, 16 (None 2011), 6-10.

@article{
author = { K.K.Nagarajan, N.Vinodhkumar, Dr.R.Srinivasan },
title = { Effect of Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations },
journal = { International Conference on VLSI, Communication & Instrumentation },
issue_date = { None 2011 },
volume = { ICVCI },
number = { 16 },
month = { None },
year = { 2011 },
issn = 0975-8887,
pages = { 6-10 },
numpages = 5,
url = { /proceedings/icvci/number16/2747-1587/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on VLSI, Communication & Instrumentation
%A K.K.Nagarajan
%A N.Vinodhkumar
%A Dr.R.Srinivasan
%T Effect of Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations
%J International Conference on VLSI, Communication & Instrumentation
%@ 0975-8887
%V ICVCI
%N 16
%P 6-10
%D 2011
%I International Journal of Computer Applications
Abstract

The effect of gate – drain/source underlap ( Lun ) on a narrow band LNA performance has been studied , in 30 nm FinFET using device and mixed mode simulations. Studies are done by maintaining and not maintaining the leakage current (Ioff) of the various devices. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used as performance metrics. To get the better noise performance and gain, Lun in the range of 3-5nm is recommended.

References
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Index Terms

Computer Science
Information Sciences

Keywords

FinFET LNA TCAD Underlap