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Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

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IJCA Proceedings on International Conference and workshop on Emerging Trends in Technology (ICWET 2012)
© 2012 by IJCA Journal
icwet2012 - Number 6
Year of Publication: 2012
Authors:
Rajesh B. Lohani
Jaya V. Gaitonde

Rajesh B Lohani and Jaya V Gaitonde. Article: Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods. IJCA Proceedings on International Conference and workshop on Emerging Trends in Technology (ICWET 2012) icwet(6):36-40, March 2012. Full text available. BibTeX

@article{key:article,
	author = {Rajesh B. Lohani and Jaya V. Gaitonde},
	title = {Article: Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods},
	journal = {IJCA Proceedings on International Conference and workshop on Emerging Trends in Technology (ICWET 2012)},
	year = {2012},
	volume = {icwet},
	number = {6},
	pages = {36-40},
	month = {March},
	note = {Full text available}
}

Abstract

OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the switching characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into the substrate. The switching parameters include transconductance, channel conductance, drain to source resistance, gate to source, gate to drain and drain to source capacitances.

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