Priyanka Tyagi and Aakansha Garg. Article: Modelling of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS. IJCA Proceedings on National Conference on IPR, Future Technology, Optimization and Management NCIFTOM 2016(1):15-20, April 2018. Full text available. BibTeX
@article{key:article, author = {Priyanka Tyagi and Aakansha Garg}, title = {Article: Modelling of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS}, journal = {IJCA Proceedings on National Conference on IPR, Future Technology, Optimization and Management}, year = {2018}, volume = {NCIFTOM 2016}, number = {1}, pages = {15-20}, month = {April}, note = {Full text available} }
Abstract
This paper related to modelling and simulation of the carbon nanotube field effect transistor (CNTFET). There are two compact models for CNTFET's, the first which behaves like a MOSFET is known as the classical behaviour model and the other one is schottky barrier CNTFET is known as ambipolarbehaviourmodel . Like MOSFET devices these models implemented in VHDL-AMS. MOSFETs are modelled in VHDL which is a hardware description language and results are simulated on the simulators. CNTFET models are implemented on VHDL-AMS and have been compared with numerical simulation.
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