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Modelling of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS

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IJCA Proceedings on National Conference on IPR, Future Technology, Optimization and Management
© 2018 by IJCA Journal
NCIFTOM 2016 - Number 1
Year of Publication: 2018
Authors:
Priyanka Tyagi
Aakansha Garg

Priyanka Tyagi and Aakansha Garg. Article: Modelling of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS. IJCA Proceedings on National Conference on IPR, Future Technology, Optimization and Management NCIFTOM 2016(1):15-20, April 2018. Full text available. BibTeX

@article{key:article,
	author = {Priyanka Tyagi and Aakansha Garg},
	title = {Article: Modelling of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS},
	journal = {IJCA Proceedings on National Conference on IPR, Future Technology, Optimization and Management},
	year = {2018},
	volume = {NCIFTOM 2016},
	number = {1},
	pages = {15-20},
	month = {April},
	note = {Full text available}
}

Abstract

This paper related to modelling and simulation of the carbon nanotube field effect transistor (CNTFET). There are two compact models for CNTFET's, the first which behaves like a MOSFET is known as the classical behaviour model and the other one is schottky barrier CNTFET is known as ambipolarbehaviourmodel . Like MOSFET devices these models implemented in VHDL-AMS. MOSFETs are modelled in VHDL which is a hardware description language and results are simulated on the simulators. CNTFET models are implemented on VHDL-AMS and have been compared with numerical simulation.

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